An undoped Si/SiGe HFET achieves optically programmable non-volatile memory with >10^3 cycle endurance and >10^4 s retention at 1.5 K by locking threshold voltage via high interface trap density.
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cond-mat.mes-hall 2years
2026 2verdicts
UNVERDICTED 2representative citing papers
Gate-biased near-IR illumination alters oxide-semiconductor trapped charge to individually tune Si/SiGe quantum dot operating voltages to uniformity while leaving charge noise unchanged.
citing papers explorer
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Optically programmable and erasable cryogenic flash memory on an undoped Si/SiGe heterostructure
An undoped Si/SiGe HFET achieves optically programmable non-volatile memory with >10^3 cycle endurance and >10^4 s retention at 1.5 K by locking threshold voltage via high interface trap density.
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Individually tunable Si/SiGe quantum dot operating voltages via gate-biased illumination
Gate-biased near-IR illumination alters oxide-semiconductor trapped charge to individually tune Si/SiGe quantum dot operating voltages to uniformity while leaving charge noise unchanged.