Spectroscopic mapping of InGaN nanowires reveals a redshift along the growth axis that the authors attribute to indium composition gradients, confirming a known effect in a new sample set.
High efficiency green, yellow, and amber emission from ingan/gan dot- in-a-wire heterostructures on si (111)
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Characterization of the optical response from variant InGaN nanowires emitting within the green spectral gap
Spectroscopic mapping of InGaN nanowires reveals a redshift along the growth axis that the authors attribute to indium composition gradients, confirming a known effect in a new sample set.