Space-charge effects from carrier-dopant competition govern room-temperature nonlinear transport in boron- and arsenic-doped silicon RNPUs, with background doping polarity setting the onset and strength beyond the Mott-Gurney law.
Title resolution pending
1 Pith paper cite this work. Polarity classification is still indexing.
1
Pith paper citing it
fields
cond-mat.other 1years
2026 1verdicts
UNVERDICTED 1representative citing papers
citing papers explorer
-
Space-Charge-Driven Nonlinear Charge Transport in Silicon Reconfigurable Nonlinear-Processing Units
Space-charge effects from carrier-dopant competition govern room-temperature nonlinear transport in boron- and arsenic-doped silicon RNPUs, with background doping polarity setting the onset and strength beyond the Mott-Gurney law.