Defect states buried below the valence band maximum in semiconductors become radiative bound states in the continuum via exchange-induced reordering under excitation, as shown for the silicon G-center with matching temperature-dependent photoluminescence lifetimes.
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Radiative electronic bound states in the continuum from defects in semiconductors
Defect states buried below the valence band maximum in semiconductors become radiative bound states in the continuum via exchange-induced reordering under excitation, as shown for the silicon G-center with matching temperature-dependent photoluminescence lifetimes.