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(1) Alkauskas, A · 2014 · DOI 10.1103/physrevb.90.075202

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Radiative electronic bound states in the continuum from defects in semiconductors

cond-mat.mtrl-sci · 2026-05-26 · unverdicted · novelty 6.0

Defect states buried below the valence band maximum in semiconductors become radiative bound states in the continuum via exchange-induced reordering under excitation, as shown for the silicon G-center with matching temperature-dependent photoluminescence lifetimes.

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  • Radiative electronic bound states in the continuum from defects in semiconductors cond-mat.mtrl-sci · 2026-05-26 · unverdicted · none · ref 1

    Defect states buried below the valence band maximum in semiconductors become radiative bound states in the continuum via exchange-induced reordering under excitation, as shown for the silicon G-center with matching temperature-dependent photoluminescence lifetimes.