A discrete SiGe BJT transimpedance front-end plus two LTC6431 stages gives a preamplifier board with sub-femtocoulomb equivalent noise charge and tens-of-picoseconds timing for LGAD, PIN, and 3D silicon detectors.
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A High Gain Preamplifier Board for Low Charge Semiconductor Detectors
A discrete SiGe BJT transimpedance front-end plus two LTC6431 stages gives a preamplifier board with sub-femtocoulomb equivalent noise charge and tens-of-picoseconds timing for LGAD, PIN, and 3D silicon detectors.