Using the standard polarization-2DEG, Johnson, and Baliga limits, the paper argues GaN's ~3.3 MV/cm breakdown field makes it the best RF platform through 90 GHz.
Morkoç,Nitride Semiconductors and Devices, vol
1 Pith paper cite this work, alongside 906 external citations. Polarity classification is still indexing.
1
Pith paper citing it
906
external citations · OpenAlex
fields
cond-mat.mtrl-sci 1years
2026 1verdicts
CONDITIONAL 1representative citing papers
citing papers explorer
-
Physics to Circuit Analysis of GaN RF Integrated Circuits versus GaAs and Silicon
Using the standard polarization-2DEG, Johnson, and Baliga limits, the paper argues GaN's ~3.3 MV/cm breakdown field makes it the best RF platform through 90 GHz.