An Ar-H plasma applied before aluminum-oxide growth raises peak mobility in shallow InAs quantum wells to 45,300 cm2/Vs and lowers sample-to-sample variance compared with untreated or TMA-treated samples.
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Repairing the Surface of InAs-based Topological Heterostructures
An Ar-H plasma applied before aluminum-oxide growth raises peak mobility in shallow InAs quantum wells to 45,300 cm2/Vs and lowers sample-to-sample variance compared with untreated or TMA-treated samples.