In a-Si/Ag/Cu memristors, charge transport is dominated by discrete conductive filaments with mean surface density ~3200 per μm²; both volatile and non-volatile filaments coexist and are explained by a multiple trap-assisted tunneling model yielding reasonable physical property estimates.
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Investigation of filamentation in a-Si/Ag/Cu memristors with atomic force microscope
In a-Si/Ag/Cu memristors, charge transport is dominated by discrete conductive filaments with mean surface density ~3200 per μm²; both volatile and non-volatile filaments coexist and are explained by a multiple trap-assisted tunneling model yielding reasonable physical property estimates.