Band offsets at beta-Ga2O3/(AlxGa1-x)2O3 interfaces depend strongly on growth direction and strain, and TCAD models using these offsets reproduce forward-bias diode measurements.
Title resolution pending
1 Pith paper cite this work, alongside 12 external citations. Polarity classification is still indexing.
1
Pith paper citing it
12
external citations · OpenAlex
citation-role summary
dataset 1
citation-polarity summary
fields
cond-mat.mtrl-sci 1years
2025 1verdicts
CONDITIONAL 1roles
dataset 1polarities
use dataset 1representative citing papers
citing papers explorer
-
\beta-Ga2O3-Based Heterojunctions: Exploring Growth Orientations and Alloying on Electronic Properties
Band offsets at beta-Ga2O3/(AlxGa1-x)2O3 interfaces depend strongly on growth direction and strain, and TCAD models using these offsets reproduce forward-bias diode measurements.