LPCVD grows controllable Ge-doped (010) β-Ga₂O₃ films with 62–105 cm²/V·s mobility, a 14 meV shallow donor, and functional Ni Schottky diodes with Ron,sp of 2.49 mΩ·cm².
A.; Saha, S.; Singisetti, U.; Bhuiyan, A
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High-Quality Ge-Doped (010) $\beta$-Ga$_2$O$_3$ Homoepitaxial Films Grown by Low-pressure CVD: Structural, Electrical, and Schottky Diode Characteristics
LPCVD grows controllable Ge-doped (010) β-Ga₂O₃ films with 62–105 cm²/V·s mobility, a 14 meV shallow donor, and functional Ni Schottky diodes with Ron,sp of 2.49 mΩ·cm².