A stacked LSTM trained collectively on several MOSFETs predicts the degradation of an unseen MOSFET from its resistance trajectory, with 8.9% error at the 0.05 ohm failure threshold.
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Real-time Deep Learning at the Edge for Scalable Reliability Modeling of Si-MOSFET Power Electronics Converters
A stacked LSTM trained collectively on several MOSFETs predicts the degradation of an unseen MOSFET from its resistance trajectory, with 8.9% error at the 0.05 ohm failure threshold.