Plasma-free deep mesa etching via Ga-assisted LPCVD increases breakdown voltage in β-Ga₂O₃ SBDs from 287 V to 500 V with stable forward performance and thermionic transport up to 250 °C.
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Vertical $\beta$-Ga$_2$O$_3$ Schottky Diodes with Deep-Etch Field Termination using Plasma-free Ga-assisted Etching
Plasma-free deep mesa etching via Ga-assisted LPCVD increases breakdown voltage in β-Ga₂O₃ SBDs from 287 V to 500 V with stable forward performance and thermionic transport up to 250 °C.