Analysis of twin defects in GaAs nanowires and tetrahedra and their correlation to GaAs(111)B surface reconstructions in selective-area metal organic vapour-phase epitaxy

Yoshida, H · 2009

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physics.app-ph · 2026-05-13 · unverdicted · novelty 6.0

Sb-mediated facet engineering produces axial InGaAs quantum dots in GaAs nanowires with demonstrated single-photon emission and short lifetimes.

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Monolithic axial InGaAs quantum dot emitters in GaAs-based nanowires via Sb-mediated facet engineering physics.app-ph · 2026-05-13 · unverdicted · none · ref 34
Sb-mediated facet engineering produces axial InGaAs quantum dots in GaAs nanowires with demonstrated single-photon emission and short lifetimes.