Family of High-Chern-Number Orbital Magnets in Twisted Rhombohedral Graphene

Realizing Chern insulators with Chern numbers greater than one remains a major goal in quantum materials research. Such platforms promise multichannel dissipationless chiral transport and access to correlated phases beyond the conventional C = 1 paradigm. Here, we discover a family of high-Chern-number orbital magnets in twisted monolayer-multilayer rhombohedral graphene, denoted (1+n) with n = 3, 4, and 5. Magnetotransport measurements show pronounced anomalous Hall effects at one and three electrons per moir\'e unit cell when they are polarized away from the moir\'e interface. Across the (1+n) systems, we observe a clear topological hierarchy C = n, revealed by the St\v{r}eda trajectories and the quantized Hall resistance. Our experimental observations are supported by self-consistent mean-field calculations. Moreover, we realize both electrical and magnetic switching of the high-Chern-number states by flipping the valley polarization. Together, these results establish a tunable hierarchy of orbital Chern magnets in twisted rhombohedral graphene, offering systematic control of Chern number and topology through layer engineering in pristine graphene moir\'e systems.