A dark matter detector platform combining a 60 meV-gap semiconductor (Eu5In2Sb6) with cryogenic HEMT readout and daily modulation analysis is presented, with projected sensitivity to sub-MeV dark matter.
Observation of beta decay of In-115 to the first excited level of Sn-115
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abstract
In the context of the LENS R&D solar neutrino project, the gamma spectrum of a sample of metallic indium was measured using a single experimental setup of 4 HP-Ge detectors located underground at the Gran Sasso National Laboratories (LNGS), Italy. A gamma line at the energy (497.48 +/- 0.21) keV was found that is not present in the background spectrum and that can be identified as a gamma quantum following the beta decay of In-115 to the first excited state of Sn-115 (9/2+ --> 3/2+). This decay channel of In-115, which is reported here for the first time, has an extremely low Q-value, Q = (2 +/- 4) keV, and has a much lower probability than the well-known ground state-ground state transition, being the branching ratio b = (1.18 +/- 0.31) 10^-6. This could be the beta decay with the lowest known Q-value. The limit on charge non-conserving beta decay of In-115 is set at 90% C.L. as tau > 4.1 10^20 y.
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SPLENDOR: a novel detector platform to search for light dark matter with narrow-gap semiconductors
A dark matter detector platform combining a 60 meV-gap semiconductor (Eu5In2Sb6) with cryogenic HEMT readout and daily modulation analysis is presented, with projected sensitivity to sub-MeV dark matter.