Nitrogen-doped graphene electrodes enable barrier-free Ohmic contact at zero gate voltage in MoS2 FETs, shifting threshold to -54.2 V and boosting on-current by 214% and mobility four-fold versus pristine graphene.
Title resolution pending
1 Pith paper cite this work. Polarity classification is still indexing.
1
Pith paper citing it
fields
cond-mat.mtrl-sci 1years
2019 1verdicts
UNVERDICTED 1representative citing papers
citing papers explorer
-
High-performance monolayer MoS2 field-effect transistor with large-scale nitrogen-doped graphene electrodes for Ohmic contact
Nitrogen-doped graphene electrodes enable barrier-free Ohmic contact at zero gate voltage in MoS2 FETs, shifting threshold to -54.2 V and boosting on-current by 214% and mobility four-fold versus pristine graphene.