Engineering resonant interband transitions in a GaAs/AlGaAs heterostructure combined with a high-Q metasurface boosts the effective second-order nonlinearity to ~14 nm/V at 1.57 μm.
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Quantum-Well-Metasurface to Maximize Nonlinear Polarization
Engineering resonant interband transitions in a GaAs/AlGaAs heterostructure combined with a high-Q metasurface boosts the effective second-order nonlinearity to ~14 nm/V at 1.57 μm.