KPFM shows work function rising with layer number in MoS2 bilayers, with larger differences in AB stacking due to stronger interlayer coupling, plus n-type photogating from substrate effects and surface traps.
Indirect-to-direct band gap crossover in few-layer mote2.Nano letters, 15(4):2336–2342
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Nanoscale mapping of stacking-dependent work function and local photoresponse in CVD-grown MoS2 bilayers by KPFM
KPFM shows work function rising with layer number in MoS2 bilayers, with larger differences in AB stacking due to stronger interlayer coupling, plus n-type photogating from substrate effects and surface traps.