A word-line voltage margin measured with a modified row decoder can characterize SRAM write stability without touching the memory core, and it correlates with existing writability metrics in simulation.
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An Affordable Experimental Technique for SRAM Write Margin Characterization for Nanometer CMOS Technologies
A word-line voltage margin measured with a modified row decoder can characterize SRAM write stability without touching the memory core, and it correlates with existing writability metrics in simulation.