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Oigawa , author J.-F

author author H · Japanese Journal of Applied Physics · DOI 10.1143/jjap.30.l322

1 Pith paper cite this work, alongside 247 external citations. Polarity classification is still indexing.

1 Pith paper citing it
247 external citations · OpenAlex
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fields

physics.optics 1

years

2025 1

verdicts

CONDITIONAL 1

representative citing papers

Efficient passivation of III-As(P) photonic interfaces

physics.optics · 2025-02-12 · conditional · novelty 6.0

PH3 annealing of dry-etched III-As(P) quantum-well ridges reduces surface recombination velocity to 2e3 cm/s, about 7.5x lower than unpassivated and lower than sulfide plus Al2O3, though InP regrowth reaches 5e2 cm/s.

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  • Efficient passivation of III-As(P) photonic interfaces physics.optics · 2025-02-12 · conditional · none · ref 8

    PH3 annealing of dry-etched III-As(P) quantum-well ridges reduces surface recombination velocity to 2e3 cm/s, about 7.5x lower than unpassivated and lower than sulfide plus Al2O3, though InP regrowth reaches 5e2 cm/s.