Polarity reduces symmetry of c-GaN in four-fold Si inverted pyramids, producing two polarity-inverting h-GaN/c-GaN boundaries whose structures include a previously unreported basal-plane inversion domain boundary in undoped h-GaN.
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Role of polarity in the growth of cubic GaN within silicon inverted pyramids
Polarity reduces symmetry of c-GaN in four-fold Si inverted pyramids, producing two polarity-inverting h-GaN/c-GaN boundaries whose structures include a previously unreported basal-plane inversion domain boundary in undoped h-GaN.