Optimization of doping, bias, and geometry in SiC p-i-n diodes reduces charge noise and optical linewidth for embedded divacancy spin centers, with a new leakage-current noise formalism mitigated by defect placement away from surfaces.
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Spin Kerr-cat qubits encode information in the lowest levels of a Z2-symmetric nuclear-spin Hamiltonian in quadrupolar nuclei to achieve first-order dephasing suppression, yielding estimated T2* of 100 s for 123Sb in silicon and 99% two-qubit gate fidelity with quadrupolar enhancement.
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Enhancing Coherence of Spin Centers in p-n Diodes via Optimization Algorithms
Optimization of doping, bias, and geometry in SiC p-i-n diodes reduces charge noise and optical linewidth for embedded divacancy spin centers, with a new leakage-current noise formalism mitigated by defect placement away from surfaces.