Cryogenic dual-layer graphene phase modulators on SiN waveguides achieve insertion losses below 0.3 dB, modulation lengths under 50 μm, and GHz bandwidths via geometry and material optimization.
Characteristic study of silicon nitride films deposited by LPCVD and PECVD
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Cryogenic Graphene-Based Phase Modulators for Quantum Information Processing
Cryogenic dual-layer graphene phase modulators on SiN waveguides achieve insertion losses below 0.3 dB, modulation lengths under 50 μm, and GHz bandwidths via geometry and material optimization.