arxiv: 2605.00112 · v1 · submitted 2026-04-30 · ⚛️ physics.optics · quant-ph

Recognition: unknown

Cryogenic Graphene-Based Phase Modulators for Quantum Information Processing

Alisson Ronieri Cadore, Leonard Barboza Navarro, Maria Carolina Volpato, Pierre-Louis de Assis

Authors on Pith no claims yet

Pith reviewed 2026-05-09 20:41 UTC · model grok-4.3

classification ⚛️ physics.optics quant-ph

keywords grapheneelectro-optic modulatorcryogenic photonicssilicon nitride waveguidephase modulationquantum information processingPauli blocking

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The pith

Cryogenic operation sharpens graphene conductivity to deliver phase modulators with under 0.3 dB loss in lengths below 50 micrometers.

A machine-rendered reading of the paper's core claim, the machinery that carries it, and where it could break.

The paper examines dual-layer graphene electro-optic phase modulators on silicon nitride waveguides and shows that cooling to 10 K improves performance for photonic quantum computing. Lower temperatures narrow the Fermi-Dirac distribution, which lets the device reach the Pauli-blocking regime at smaller Fermi levels and therefore needs less length to produce the desired phase shift. The authors combine electromagnetic simulations with the Kybo model of graphene conductivity to optimize waveguide shape, spacer thickness, and material quality under realistic voltage limits. This yields designs that keep insertion loss low while preserving GHz-scale speed. The work supplies concrete guidelines for building compact, low-loss components that can operate alongside cryogenic qubits.

Core claim

Cryogenic temperatures enhance device performance by sharpening the Fermi-Dirac distribution, enabling access to the Pauli-blocking regime at lower Fermi levels and thereby reducing the required modulation length; optimized geometries, spacer parameters, and graphene quality then achieve near-pure phase modulation with insertion losses below 0.3 dB and modulation lengths below 50 micrometers at 10 K while retaining GHz bandwidths.

What carries the argument

Dual-layer graphene (DSLG) electro-optic phase modulator on a silicon nitride waveguide whose conductivity, losses, and electrostatic response are computed with the Kybo formalism.

If this is right

Compact graphene phase shifters become viable building blocks for fully cryogenic integrated quantum photonic circuits.
Lower modulation lengths allow higher component density without sacrificing bandwidth.
Reduced insertion loss helps preserve photon coherence in quantum information processing.
The same optimization approach can be applied to other two-dimensional materials once their low-temperature conductivity models are available.

Where Pith is reading between the lines

These are editorial extensions of the paper, not claims the author makes directly.

If the designs prove fabricable, they could be combined with superconducting detectors or qubits on the same chip to reduce thermal loading.
Room-temperature versions would require different spacer and doping choices because the Pauli-blocking advantage disappears.
Extending the model to include disorder or edge scattering at 10 K would test how robust the loss predictions remain.

Load-bearing premise

The Kybo model accurately predicts graphene conductivity, optical losses, and Pauli blocking at cryogenic temperatures for the assumed material quality and voltage range, and the simulated geometries can be fabricated without large unmodeled effects.

What would settle it

Fabrication and cryogenic measurement of an optimized device that requires either more than 0.3 dB insertion loss or a length greater than 50 micrometers to produce the target phase shift would falsify the performance claims.

Figures

Figures reproduced from arXiv: 2605.00112 by Alisson Ronieri Cadore, Leonard Barboza Navarro, Maria Carolina Volpato, Pierre-Louis de Assis.

**Figure 2.** Figure 2: (a) Cross-sectional schematic of the Si3N4 layer covering the DSLG integrated on the RWG. (b) Simulated —E— of the fundamental TE mode confined at 1.55 µm. (c) ∆neff and MPA for different values of the Si3N4 layer thickness. The simulations were performed under the same conditions as in [PITH_FULL_IMAGE:figures/full_fig_p010_2.png] view at source ↗

**Figure 3.** Figure 3: (a) ∆neff and MPA for different graphene carrier mobility values: low mobility (∼ 1000 cm2/Vs), intermediate mobility (∼ 2500 cm2/Vs), and high mobility (∼ 10 000 cm2/Vs). The simulations are performed using the same design parameters and conditions as in [PITH_FULL_IMAGE:figures/full_fig_p012_3.png] view at source ↗

**Figure 4.** Figure 4: (a) Equivalent electrical circuit of the DSLG-based waveguide phase [PITH_FULL_IMAGE:figures/full_fig_p026_4.png] view at source ↗

**Figure 5.** Figure 5: Cross-sectional schematic of RWG. The SiO [PITH_FULL_IMAGE:figures/full_fig_p027_5.png] view at source ↗

**Figure 6.** Figure 6: Effective index of the fundamental TE and TM modes as a function [PITH_FULL_IMAGE:figures/full_fig_p028_6.png] view at source ↗

**Figure 7.** Figure 7: Mode Propagation Attenuation by Au Electrode for [PITH_FULL_IMAGE:figures/full_fig_p029_7.png] view at source ↗

read the original abstract

Electro-optic modulators are key components for photonic quantum computing, particularly in fully cryovenic integrated platforms where low loss and compactness are critical. We present a systematic theoretical investigation of compact dual-layer graphene (DSLG) electro-optic phase modulators integrated on silicon nitride waveguides, with emphasis on cryogenic operation. By combining electromagnetic simulations with a physically consistent description of graphene conductivity based on the Kybo formalism, we analyze the interplay between electrostatic tuning, optical mode confinement, and material-dependent losses. We show that cryogenic operation enhances device performance by sharpening the Fermi-Dirac distribution, enabling access to the Pauli-blocking regime at lower Fermi levels and reducing the required modulation length. Through optimization of the waveguide geometry, dielectric spacer thickness and permittivity, and graphene quality, we identify regimes that simultaneously minimize insertion loss and device footprint under realistic voltage constraints. The optimized designs achieve near-pure phase modulation with insertion losses below 0.3 dB and modulation lengths below 50 um at 10 K, while maintaining GHz-scale bandwidths. These results provide quantitative design guidelines for low-loss, compact, cryogenic graphene phase modulators for scalable integrated quantum photonics.

Editorial analysis

A structured set of objections, weighed in public.

Desk editor's note, referee report, simulated authors' rebuttal, and a circularity audit. Tearing a paper down is the easy half of reading it; the pith above is the substance, this is the friction.

Desk Editor's Note private letter to a colleague

Simulations of dual-layer graphene on SiN at 10 K give plausible low-loss phase modulator numbers, but the whole claim rests on whether the Kubo model still works without extra cryogenic loss channels.

read the letter

The paper runs electromagnetic simulations of dual-layer graphene phase modulators on silicon nitride waveguides aimed at 10 K operation. It optimizes waveguide geometry, spacer thickness, and graphene parameters inside the Kubo conductivity model and reports designs that reach under 0.3 dB insertion loss, under 50 µm length, near-pure phase shift, and GHz bandwidth. Cryogenic sharpening of the Fermi-Dirac distribution is shown to let Pauli blocking kick in at lower Fermi levels, which shortens the required device length compared with room-temperature runs. That part is straightforward and gives concrete numbers a designer could use as a starting point. The optimization loop itself is systematic and covers the main trade-offs between confinement, loss, and voltage swing. No new physical mechanism is claimed, just a focused parameter scan for the cryogenic quantum-photonics case. The soft spot is the complete absence of any experimental anchor or even a comparison to published cryogenic graphene loss data. The Kubo model is used with assumed scattering times and quality factors, but at 10 K real devices often show extra loss from substrate phonons, charge puddles, or temperature-dependent scattering that the chosen parameters may miss. Without sensitivity plots or error bars on those inputs, the headline numbers could shift once the model is stress-tested against actual low-temperature measurements. The paper stays within simulation bounds and does not overclaim fabrication readiness. This is useful reading for groups already working on cryogenic photonic integrated circuits who need quick design estimates before committing to fabrication runs. It is not a foundational result, but the quantitative guidelines are worth checking. I would send it to peer review so that referees can examine the Kubo parameter choices and ask for a clearer robustness analysis against known cryogenic graphene deviations.

Referee Report

2 major / 2 minor

Summary. The manuscript presents a theoretical investigation of dual-layer graphene electro-optic phase modulators integrated on silicon nitride waveguides, optimized for cryogenic operation at 10 K. It combines electromagnetic simulations with the Kybo (Kubo) conductivity model to analyze electrostatic tuning, mode confinement, and losses, claiming that optimized waveguide geometry, spacer parameters, and graphene quality yield near-pure phase modulation with insertion losses below 0.3 dB, modulation lengths below 50 μm, and GHz-scale bandwidths under realistic voltage constraints.

Significance. If the simulation results accurately predict fabricated device behavior, the work would provide useful quantitative design guidelines for compact, low-loss cryogenic phase modulators, which are important for scalable integrated quantum photonics platforms where low loss and small footprint are critical.

major comments (2)

[Abstract] Abstract and optimization section: the headline performance figures (insertion loss <0.3 dB, length <50 μm at 10 K) are obtained from parameter optimization inside electromagnetic simulations, but no details are supplied on model validation against cryogenic graphene data, error bars on the reported metrics, sensitivity analysis to graphene quality parameters, or the precise procedure for selecting post-optimization values; this makes the specific numbers impossible to assess independently.
[Methods] Graphene conductivity modeling: the Kybo formalism is used to capture sharpening of the Fermi-Dirac distribution and Pauli blocking at 10 K, yet the manuscript does not address whether additional cryogenic loss mechanisms (substrate phonons, charge inhomogeneity, or temperature-dependent scattering beyond the assumed scattering time) are included; if these are present in real SiN-graphene devices, both the insertion loss and required modulation length will increase, undermining the optimized regime.

minor comments (2)

[Abstract] The abstract refers to 'Kybo formalism'; confirm this is not a typographical error for the standard Kubo model and provide the exact reference or equations used for conductivity.
[Optimization] Add explicit discussion of the voltage constraints and how they map to achievable Fermi levels in the dual-layer graphene stack.

Simulated Author's Rebuttal

2 responses · 0 unresolved

We thank the referee for their careful and constructive review of our theoretical investigation. We address each major comment below with specific plans for revision where warranted, while maintaining the integrity of our simulation-based approach.

read point-by-point responses

Referee: [Abstract] Abstract and optimization section: the headline performance figures (insertion loss <0.3 dB, length <50 μm at 10 K) are obtained from parameter optimization inside electromagnetic simulations, but no details are supplied on model validation against cryogenic graphene data, error bars on the reported metrics, sensitivity analysis to graphene quality parameters, or the precise procedure for selecting post-optimization values; this makes the specific numbers impossible to assess independently.

Authors: We agree that greater transparency on the optimization is needed. In the revised manuscript we will add a dedicated subsection in Methods detailing the electromagnetic simulation parameters, the multi-variable sweep ranges (waveguide geometry, spacer thickness/permittivity, graphene mobility and scattering time), the objective function used to identify the reported designs, and the post-optimization selection criteria. The Kubo-model parameters are taken from published cryogenic graphene measurements on SiN; we will insert the relevant citations. We will also include a sensitivity study showing how ±20 % variations in scattering time and mobility affect insertion loss and modulation length, together with derived error bars on the headline metrics. These additions will enable independent evaluation without changing the core results. revision: yes
Referee: [Methods] Graphene conductivity modeling: the Kybo formalism is used to capture sharpening of the Fermi-Dirac distribution and Pauli blocking at 10 K, yet the manuscript does not address whether additional cryogenic loss mechanisms (substrate phonons, charge inhomogeneity, or temperature-dependent scattering beyond the assumed scattering time) are included; if these are present in real SiN-graphene devices, both the insertion loss and required modulation length will increase, undermining the optimized regime.

Authors: The referee correctly identifies a modeling limitation. Our Kubo implementation incorporates the temperature-dependent Fermi-Dirac distribution and Pauli blocking with a fixed scattering time; substrate phonons, charge inhomogeneity, and additional temperature-dependent scattering are not explicitly included. In the revision we will add an explicit statement of these assumptions in Methods and a short discussion noting that, for the high-mobility regime assumed, such mechanisms are expected to be secondary at 10 K but could raise losses in practice. We will therefore qualify the reported figures as representing the performance achievable when only the modeled physics dominate. This clarification does not alter the simulation results but improves the manuscript’s honesty about the idealized nature of the optimized regime. revision: yes

Circularity Check

0 steps flagged

No significant circularity in derivation chain

full rationale

The paper's central results are obtained by forward electromagnetic simulations of waveguide geometries and graphene parameters using the standard Kybo (Kubo) conductivity model under cryogenic conditions. Performance metrics such as insertion loss below 0.3 dB and modulation lengths below 50 μm emerge as optimization outputs rather than being fitted to or defined in terms of the target claims themselves. No load-bearing self-citations, self-definitional steps, or ansatzes imported via prior author work are present; the derivation remains independent of the reported figures and relies on externally established conductivity physics.

Axiom & Free-Parameter Ledger

2 free parameters · 1 axioms · 0 invented entities

The central performance claims rest on the accuracy of the Kybo conductivity model at low temperature, the validity of electromagnetic simulation assumptions for mode confinement and losses, and the realizability of the optimized geometry parameters.

free parameters (2)

waveguide geometry and dielectric spacer parameters
Values are chosen through optimization to meet loss and length targets; specific numerical values not stated in abstract.
graphene quality parameters
Assumed values for mobility or scattering that affect loss; not detailed in abstract.

axioms (1)

domain assumption Kybo formalism provides a physically consistent description of graphene conductivity, electrostatic tuning, and optical losses at cryogenic temperatures
Invoked to model the interplay between Fermi level, Pauli blocking, and device performance.

pith-pipeline@v0.9.0 · 5507 in / 1256 out tokens · 45593 ms · 2026-05-09T20:41:59.816326+00:00 · methodology

discussion (0)

Reference graph

Works this paper leans on

57 extracted references · 29 canonical work pages

[1]

Deep learning with coherent nanophotonic cir- cuits

Yichen Shen et al. “Deep learning with coherent nanophotonic cir- cuits”. In:Nature photonics11.7 (2017), pp. 441–446

2017
[2]

An optical neural chip for implementing complex- valued neural network

Hui Zhang et al. “An optical neural chip for implementing complex- valued neural network”. In:Nature communications12.1 (2021), p. 457

2021
[3]

A versatile single-photon-based quantum com- puting platform

Nicolas Maring et al. “A versatile single-photon-based quantum com- puting platform”. In:Nature Photonics18.6 (2024), pp. 603–609

2024
[4]

Quantum computational advantage with a pro- grammable photonic processor

Lars S Madsen et al. “Quantum computational advantage with a pro- grammable photonic processor”. In:Nature606.7912 (2022), pp. 75– 81

2022
[5]

Integrated photonic source of Gottesman– Kitaev–Preskill qubits

Mikkel V Larsen et al. “Integrated photonic source of Gottesman– Kitaev–Preskill qubits”. In:Nature642.8068 (2025), pp. 587–591

2025
[6]

Silicon optical modulators

Graham T Reed et al. “Silicon optical modulators”. In:Nature photon- ics4.8 (2010), pp. 518–526

2010
[7]

High-performance hybrid silicon and lithium niobate Mach–Zehnder modulators for 100 Gbit/s and beyond

Mingbo He et al. “High-performance hybrid silicon and lithium niobate Mach–Zehnder modulators for 100 Gbit/s and beyond”. In:Nature pho- tonics13.5 (2019), pp. 359–364

2019
[8]

Experimental realization of any discrete unitary op- erator

M. Reck et al. “Experimental realization of any discrete unitary op- erator”. In:Physical Review Letters73.1 (1994), pp. 58–61.doi:10. 1103/PhysRevLett.73.58

1994
[9]

Optimal design for universal multiport inter- ferometers

W. R. Clements et al. “Optimal design for universal multiport inter- ferometers”. In:Optica3.12 (2016), pp. 1460–1465.doi:10 . 1364 / OPTICA.3.001460

2016
[10]

On-demand single photons with high extraction ef- ficiency and near-unity indistinguishability from a resonantly driven quantum dot in a micropillar

X. Ding et al. “On-demand single photons with high extraction ef- ficiency and near-unity indistinguishability from a resonantly driven quantum dot in a micropillar”. In:Physical Review Letters116.2 (2016), p. 020401

2016
[11]

Cryogenic electro-optic polarisation conversion in tita- nium in-diffused lithium niobate waveguides

F. Thiele et al. “Cryogenic electro-optic polarisation conversion in tita- nium in-diffused lithium niobate waveguides”. In:Optics Express28.20 (2020), pp. 28961–28968. 20

2020
[12]

Lithium niobate modulator from room tempera- ture to cryogenic conditions

Chang Chang et al. “Lithium niobate modulator from room tempera- ture to cryogenic conditions”. In:Optics Express(2024)

2024
[13]

Temperature dependence of photorefractive effect in reduced near-stoichiometric LiNbO 3 crystal

H. Qiao et al. “Temperature dependence of photorefractive effect in reduced near-stoichiometric LiNbO 3 crystal”. In:Optics Communica- tions276.1 (2007), pp. 130–133

2007
[14]

An integrated optical modulator operating at cryogenic temperatures

F. Eltes, G. E. Villarreal-Garcia, D. Caimi, et al. “An integrated optical modulator operating at cryogenic temperatures”. In:Nature Materials 19 (2020), pp. 1164–1168.doi:10.1038/s41563-020-0725-5

work page doi:10.1038/s41563-020-0725-5 2020
[15]

High-performance integrated graphene electro-optic mod- ulator at cryogenic temperature

B. Lee et al. “High-performance integrated graphene electro-optic mod- ulator at cryogenic temperature”. In:Nanophotonics10.1 (2021), pp. 99– 104.doi:10.1515/nanoph-2020-0363

work page doi:10.1515/nanoph-2020-0363 2021
[16]

χ (2) nonlinear photonics in integrated microresonators

P. Liu et al. “χ (2) nonlinear photonics in integrated microresonators”. In:Frontiers of Optoelectronics16 (2023), p. 18.doi:10.1007/s12200- 023-00073-4

work page doi:10.1007/s12200- 2023
[17]

A graphene-based broadband optical modulator

M. Liu, X. Yin, E. Ulin-Avila, et al. “A graphene-based broadband optical modulator”. In:Nature474 (2011), pp. 64–67.doi:10.1038/ nature10067

2011
[18]

Graphene-based silicon photonic electro-absorption mod- ulators and phase modulators

C. Wu et al. “Graphene-based silicon photonic electro-absorption mod- ulators and phase modulators”. In:IEEE Journal of Selected Topics in Quantum Electronics30.4 (2024), p. 3400311.doi:10.1109/JSTQE. 2024.3411058

work page doi:10.1109/jstqe 2024
[19]

Significantly high modulation effi- ciency of compact graphene modulator based on silicon waveguide

H. Shu, Z. Su, L. Huang, et al. “Significantly high modulation effi- ciency of compact graphene modulator based on silicon waveguide”. In:Scientific Reports8 (2018), p. 991

2018
[20]

Neamen.Semiconductor Physics and Devices: Basic Prin- ciples

Donald A. Neamen.Semiconductor Physics and Devices: Basic Prin- ciples. 4th ed. New York: McGraw-Hill Education, 2012.isbn: 978- 0073529585

2012
[21]

Characteristic study of silicon nitride films deposited by LPCVD and PECVD

Chris Yang and John Pham. “Characteristic study of silicon nitride films deposited by LPCVD and PECVD”. In:Silicon10.6 (2018), pp. 2561–2567

2018
[22]

Anneal-free ultra-low loss silicon nitride in- tegrated photonics

Debapam Bose et al. “Anneal-free ultra-low loss silicon nitride in- tegrated photonics”. In:Light: Science & Applications13.1 (2024), p. 156. 21

2024
[23]

Multilayer graphene electro-absorption optical modula- tor based on double-stripe silicon nitride waveguide

M. Fan et al. “Multilayer graphene electro-absorption optical modula- tor based on double-stripe silicon nitride waveguide”. In:Optics Express 25.18 (2017), pp. 21619–21629.doi:10.1364/OE.25.021619

work page doi:10.1364/oe.25.021619 2017
[24]

Effect of deposition conditions on mechanical prop- erties of low-temperature PECVD silicon nitride films

Han Huang et al. “Effect of deposition conditions on mechanical prop- erties of low-temperature PECVD silicon nitride films”. In:Materials Science and Engineering: A435 (2006), pp. 453–459

2006
[25]

Low-power electro–optic phase modulator based on multi- layer graphene/silicon nitride waveguide

L. Ji et al. “Low-power electro–optic phase modulator based on multi- layer graphene/silicon nitride waveguide”. In:Chinese Physics B29.8 (2020), p. 084207.doi:10.1088/1674-1056/ab943b

work page doi:10.1088/1674-1056/ab943b 2020
[26]

Design of mid-infrared graphene optical mod- ulators and detectors with gigahertz bandwidth on suspended silicon waveguides

M. Tiberi and C. Wen. “Design of mid-infrared graphene optical mod- ulators and detectors with gigahertz bandwidth on suspended silicon waveguides”. In:2025 IEEE Silicon Photonics Conference (SiPhoton- ics). London, UK, 2025, pp. 1–2.doi:10.1109/SiPhotonics64386. 2025.10985595

work page doi:10.1109/siphotonics64386 2025
[27]

Experimental verification of electro-refractive phase modulation in graphene

M. Mohsin et al. “Experimental verification of electro-refractive phase modulation in graphene”. In:Scientific Reports5 (2015), p. 10967.doi: 10.1038/srep10967

work page doi:10.1038/srep10967 2015
[28]

Graphene phase mod- ulators operating in the transparency regime

H. F. Y. Watson, A. Ruocco, M. Tiberi, et al. “Graphene phase mod- ulators operating in the transparency regime”. In:ACS Nano18.44 (2024), pp. 30269–30282.doi:10.1021/acsnano.4c02292

work page doi:10.1021/acsnano.4c02292 2024
[29]

Design op- timization of single and double layer graphene phase modulators in SOI

Vito Sorianello, Michele Midrio, and Marco Romagnoli. “Design op- timization of single and double layer graphene phase modulators in SOI”. In:Optics Express23.5 (2015), pp. 6478–6490

2015
[30]

Gate-variable optical transitions in graphene

Feng Wang et al. “Gate-variable optical transitions in graphene”. In: Science320.5873 (2008), pp. 206–209

2008
[31]

Sakharov conditions

L. A. Falkovsky. “Optical properties of graphene”. In:Journal of Physics: Conference Series129.1 (2008), p. 012004.doi:10.1088/1742-6596/ 129/1/012004

work page doi:10.1088/1742-6596/ 2008
[32]

(Tom) Chen.Modeling graphene in high-frequency electromagnet- ics

X. (Tom) Chen.Modeling graphene in high-frequency electromagnet- ics. COMSOL Blog. Available at:https://www.comsol.com/blogs/ modeling- graphene- in- high- frequency- electromagnetics(Ac- cessed: Jan 2026). June 2022. 22

2026
[33]

Online documentation

ANSYS Optics.Graphene surface conductivity material model. Online documentation. Available at:https://optics.ansys.com/hc/en- us / articles / 360042244874 - Graphene - surface - conductivity - material-model(Accessed: Jan 2026)

2026
[34]

Exact Solutions of the Sine-Gordon Equation Describing Oscillations in a Long (but Finite) Josephson Junction

S. Dr¨ oscher et al. “Quantum capacitance and density of states of graphene”. In:Applied Physics Letters96.15 (2010), p. 152104.doi:10.1063/1. 3373529

work page doi:10.1063/1 2010
[35]

Measurement of the quantum capacitance of graphene

J. Xia et al. “Measurement of the quantum capacitance of graphene”. In:Nature Nanotechnology4 (2009), pp. 505–509.doi:10 . 1038 / nnano.2009.177

2009
[36]

Asymmetric Effect of Oxygen Adsorption on Elec- tron and Hole Mobilities in Bilayer Graphene: Long- and Short-Range Scattering Mechanisms

Ive Silvestre et al. “Asymmetric Effect of Oxygen Adsorption on Elec- tron and Hole Mobilities in Bilayer Graphene: Long- and Short-Range Scattering Mechanisms”. In:ACS Nano7.8 (2013). PMID: 23859671, pp. 6597–6604.doi:10.1021/nn402653b. eprint:https://doi.org/ 10.1021/nn402653b.url:https://doi.org/10.1021/nn402653b

work page doi:10.1021/nn402653b 2013
[37]

Charmousis, E.J

G. Giovannetti et al. “Doping graphene with metal contacts”. In:Physi- cal Review Letters101.2 (2008), p. 026803.doi:10.1103/PhysRevLett. 101.026803

work page doi:10.1103/physrevlett 2008
[38]

Metal-graphene heterojunction modulation via H 2 interaction

A. R. Cadore et al. “Metal-graphene heterojunction modulation via H 2 interaction”. In:Applied Physics Letters109.3 (July 2016), p. 033109. issn: 0003-6951.doi:10.1063/1.4959560. eprint:https://pubs. aip . org / aip / apl / article - pdf / doi / 10 . 1063 / 1 . 4959560 / 14484562 / 033109 _ 1 _ online . pdf.url:https : / / doi . org / 10 . 1063/1.4959560

work page doi:10.1063/1.4959560 2016
[39]

Lichtenberg, C

C L Pereira et al. “Reversible doping of graphene field effect transistors by molecular hydrogen: the role of the metal/graphene interface”. In: 2D Materials6.2 (Mar. 2019), p. 025037.doi:10.1088/2053-1583/ ab0b23.url:https://doi.org/10.1088/2053-1583/ab0b23

work page doi:10.1088/2053-1583/ 2019
[40]

Interspecimen Comparison of the Refractive Index of Fused Silica

I. H. Malitson. “Interspecimen comparison of the refractive index of fused silica”. In:Journal of the Optical Society of America55.10 (1965), pp. 1205–1208.doi:10.1364/JOSA.55.001205

work page doi:10.1364/josa.55.001205 1965
[41]

Refractive index and birefringence of synthetic sapphire

I. H. Malitson and M. J. Dodge. “Refractive index and birefringence of synthetic sapphire”. In:Journal of the Optical Society of America 62.12 (1972), p. 1405.doi:10.1364/JOSA.62.001405. 23

work page doi:10.1364/josa.62.001405 1972
[42]

Optical properties of hafnium oxide thin films and their application in energy-efficient windows

M. F. Al-Kuhaili. “Optical properties of hafnium oxide thin films and their application in energy-efficient windows”. In:Optical Materials 27.3 (2004), pp. 383–387.doi:10.1016/j.optmat.2004.03.007

work page doi:10.1016/j.optmat.2004.03.007 2004
[43]

Spontaneous doping on high quality talc-graphene-hBN van der Waals heterostructures

E Mania et al. “Spontaneous doping on high quality talc-graphene-hBN van der Waals heterostructures”. In:2D Materials4.3 (July 2017), p. 031008.doi:10.1088/2053- 1583/aa76f4.url:https://doi. org/10.1088/2053-1583/aa76f4

work page doi:10.1088/2053- 2017
[44]

Characterization of thin Al 2O3/SiO2 dielectric stack for CMOS transistors

Yiyi Yan et al. “Characterization of thin Al 2O3/SiO2 dielectric stack for CMOS transistors”. In:Microelectronic Engineering254 (2022), p. 111708

2022
[45]

S. M. Rezende.Introduction to Electronic Materials and Devices. Springer, 2022.isbn: 978-3-030-81771-8

2022
[46]

Ultrahigh-mobility graphene devices from chem- ical vapor deposition on reusable copper

Luca Banszerus et al. “Ultrahigh-mobility graphene devices from chem- ical vapor deposition on reusable copper”. In:Science Advances1.6 (2015), e1500222.doi:10.1126/sciadv.1500222

work page doi:10.1126/sciadv.1500222 2015
[47]

Tunable, Grating-Gated, Graphene-On- Polyimide Terahertz Modulators

Alessandra Di Gaspare et al. “Tunable, Grating-Gated, Graphene-On- Polyimide Terahertz Modulators”. In:Advanced Functional Materials 31.10 (2021), p. 2008039.doi:https : / / doi . org / 10 . 1002 / adfm . 202008039. eprint:https://advanced.onlinelibrary.wiley.com/ doi / pdf / 10 . 1002 / adfm . 202008039.url:https : / / advanced . onlinelibrary.wiley.com/...

work page doi:10.1002/adfm.202008039 2021
[48]

Thermoelectric graphene photodetectors with sub-nanosecond response times at terahertz frequencies

Leonardo Viti et al. “Thermoelectric graphene photodetectors with sub-nanosecond response times at terahertz frequencies”. In:Nanopho- tonics10.1 (2021), pp. 89–98.doi:https : / / doi . org / 10 . 1515 / nanoph - 2020 - 0255. eprint:https : / / onlinelibrary . wiley . com / doi/pdf/10.1515/nanoph-2020-0255.url:https://onlinelibrary. wiley.com/doi/abs/10.1...

work page doi:10.1515/nanoph-2020-0255.url:https://onlinelibrary 2021
[49]

Cleaning interfaces in layered materials heterostruc- tures

D. G. Purdie et al. “Cleaning interfaces in layered materials heterostruc- tures”. In:Nature Communications9 (1 2018), p. 5387.issn: 20411723. doi:10.1038/s41467-018-07558-3.url:http://dx.doi.org/10. 1038/s41467-018-07558-3

work page doi:10.1038/s41467-018-07558-3.url:http://dx.doi.org/10 2018
[50]

Non-monotonic temperature dependent transport in graphene grown by chemical vapor deposition

J. Heo et al. “Non-monotonic temperature dependent transport in graphene grown by chemical vapor deposition”. In:arXiv preprint arXiv:1009.2506 (2011). arXiv:1009.2506 [cond-mat.mes-hall]. 24

work page arXiv 2011
[51]

Ballistic Transport Exceeding 28µm in CVD Grown Graphene

Luca Banszerus et al. “Ballistic Transport Exceeding 28µm in CVD Grown Graphene”. In:Nano Letters16 (2 2016), pp. 1387–1391.issn: 15306992.doi:10.1021/acs.nanolett.5b04840

work page doi:10.1021/acs.nanolett.5b04840 2016
[52]

Electronic–photonic convergence for silicon photonics transmitters beyond 100 Gbps on–off keying

Ke Li et al. “Electronic–photonic convergence for silicon photonics transmitters beyond 100 Gbps on–off keying”. In:Optica4.8 (2017), pp. 938–945

2017
[53]

Integrated lithium niobate electro-optic modulators: when performance meets scalability

Mian Zhang et al. “Integrated lithium niobate electro-optic modulators: when performance meets scalability”. In:Optica8.5 (2021), pp. 652– 667

2021
[54]

Slussarenko and G

S. Slussarenko and G. J. Pryde. “Photonic quantum information pro- cessing: A concise review”. In:Applied Physics Reviews6.4 (2019), p. 041303.doi:10.1063/1.5115814

work page doi:10.1063/1.5115814 2019
[55]

On-Chip High Extinction Ratio Single-Stage Mach-Zehnder Interferometer Based on Multimode Inter- ferometer

S. Xie, S. Veilleux, and M. Dagenais. “On-Chip High Extinction Ratio Single-Stage Mach-Zehnder Interferometer Based on Multimode Inter- ferometer”. In:IEEE Photonics Journal14.4 (2022), p. 2237906.doi: 10.1109/JPHOT.2022.3183214

work page doi:10.1109/jphot.2022.3183214 2022
[56]

L. Y. Beliaev et al. “Optical, structural and compositional properties of silicon nitride films deposited by reactive radio-frequency sputtering, low pressure and plasma-enhanced chemical vapor deposition”. In:Thin Solid Films763 (2022), p. 139568.doi:10.1016/j.tsf.2022.139568

work page doi:10.1016/j.tsf.2022.139568 2022
[57]

Optical constants and structural properties of thin gold films

D. I. Yakubovsky et al. “Optical constants and structural properties of thin gold films”. In:Optics Express25.21 (2017), pp. 25574–25587. doi:10.1364/OE.25.025574. 25 Figure 4: (a) Equivalent electrical circuit of the DSLG-based waveguide phase modulator. (b) Frequency response of the DSLG-based waveguide phase modulator for different carrier mobility val...

work page doi:10.1364/oe.25.025574 2017