Cryogenic dual-layer graphene phase modulators on SiN waveguides achieve insertion losses below 0.3 dB, modulation lengths under 50 μm, and GHz bandwidths via geometry and material optimization.
Asymmetric Effect of Oxygen Adsorption on Elec- tron and Hole Mobilities in Bilayer Graphene: Long- and Short-Range Scattering Mechanisms
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Cryogenic Graphene-Based Phase Modulators for Quantum Information Processing
Cryogenic dual-layer graphene phase modulators on SiN waveguides achieve insertion losses below 0.3 dB, modulation lengths under 50 μm, and GHz bandwidths via geometry and material optimization.