Nanopillar geometry activates otherwise suppressed optical transitions in SiC divacancy and NV centers by transforming the excitation polarization inside the sub-wavelength structure.
arXiv preprint arXiv:2602.14818 (2026)
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Strain reduces transition rates from the lowest metastable state to the ground state quartet in VSi centers, decreasing photon emission.
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Seeing the forbidden: overcoming optical selection rules through nanophotonic integration
Nanopillar geometry activates otherwise suppressed optical transitions in SiC divacancy and NV centers by transforming the excitation polarization inside the sub-wavelength structure.
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Strain-induced modification of spin-optical dynamics in silicon vacancy centers for integrated quantum technologies
Strain reduces transition rates from the lowest metastable state to the ground state quartet in VSi centers, decreasing photon emission.