Current-induced spin polarization combined with spin-orbit defect scattering generates a bilinear magnetoresistance that scales as j*b*sinθ/|εF|^3 and dominates over the warping mechanism at low Fermi energies.
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Theory of bi-linear magnetoresistance within the minimal model for surface states in topological insulators
Current-induced spin polarization combined with spin-orbit defect scattering generates a bilinear magnetoresistance that scales as j*b*sinθ/|εF|^3 and dominates over the warping mechanism at low Fermi energies.