This paper reports MBE growth and 300 K Hall characterization of 12.5-500 nm InAs films on InAlAs metamorphic buffers, and uses a two-channel model to attribute most thin-film charge to surface and interface layers.
Epitaxial indium arsenide by vacuum evaporation
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Structural and Transport Properties of Thin InAs Layers Grown on InxAl1-xAs Metamorphic Buffers
This paper reports MBE growth and 300 K Hall characterization of 12.5-500 nm InAs films on InAlAs metamorphic buffers, and uses a two-channel model to attribute most thin-film charge to surface and interface layers.