Statistical simulations show that local structural variations produce a continuous distribution of core-level binding energies that fully accounts for the observed XPS broadening in silicon oxides, matching layer-resolved sputtering data.
For both O 1s and Si 2s, the silicon oxide peak shifts toward lower binding energies with depth
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Role of Local Structural Variation in X-ray Photoelectron Spectrum of Silicon Oxide Interfaces
Statistical simulations show that local structural variations produce a continuous distribution of core-level binding energies that fully accounts for the observed XPS broadening in silicon oxides, matching layer-resolved sputtering data.