Cooling-induced strain in a triangular silicon FinFET changes hole spin qubit band mixing, g-factors, and Rabi frequencies, with a compressive strain scenario matching the experimental device best.
Fully tunable hyperfine interactions of hole spin qubits in Si and Ge quantum dots
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abstract
Hole spin qubits are frontrunner platforms for scalable quantum computers, but state-of-the-art devices suffer from noise originating from the hyperfine interactions with nuclear defects. We show that these interactions have a highly tunable anisotropy that is controlled by device design and external electric fields. This tunability enables sweet spots where the hyperfine noise is suppressed by an order of magnitude and is comparable to isotopically purified materials. We identify surprisingly simple designs where the qubits are highly coherent and are largely unaffected by both charge and hyperfine noise. We find that the large spin-orbit interaction typical of elongated quantum dots not only speeds up qubit operations, but also dramatically renormalizes the hyperfine noise, altering qualitatively the dynamics of driven qubits and enhancing the fidelity of qubit gates. Our findings serve as guidelines to design high performance qubits for scaling up quantum computers.
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Simulation of single hole spin qubit in strained triangular FinFET quantum devices
Cooling-induced strain in a triangular silicon FinFET changes hole spin qubit band mixing, g-factors, and Rabi frequencies, with a compressive strain scenario matching the experimental device best.