MeV H+ and Br+6 irradiation of nitrogen-doped diamond followed by annealing produces NV- centers, with an optimal vacancy density near 1e19 cm-3 yielding an estimated 10 ppm NV-.
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The paper highlights the difference the properties the nitrogen vacancy centre in bulk diamond containing nitrogen compared to the properties of single centres. Charge transfer between the negative and neutral charge state can occur with a tunnelling of an electron from an adjacent nitrogen atom without involving conduction or valence electrons. This contrasts with charge transfer of single sites. There are other differences for example with the intersystem crossing.
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Diamond-defect engineering of NV- centers using ion beam irradiation
MeV H+ and Br+6 irradiation of nitrogen-doped diamond followed by annealing produces NV- centers, with an optimal vacancy density near 1e19 cm-3 yielding an estimated 10 ppm NV-.