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REVIEW 5 major objections 5 minor 39 references

Diamond-defect engineering of NV- centers using ion beam irradiation

T0 review · 5 major / 5 minor · reviewed 2026-08-11 · deepseek-v4-flash

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Pith's one-line read MeV ion irradiation followed by 800–900 °C annealing creates dense NV$^-$ ensembles, with an optimal pre-anneal vacancy density near $10^{19}$ per cubic centimeter.

desk verdict Solid incremental experimental study: MeV H+ and Br+6 irradiation plus annealing does produce NV- centers in N-doped diamond, but the quantitative 'optimal vacancy density' and ~10 ppm NV- claims lean on unverified electron-irradiation calibration and a single sample. read the letter →

arxiv 2412.03386 v1 pith:FKTQFEXM submitted 2024-12-04 cond-mat.mtrl-sci physics.acc-phphysics.app-ph

J. L. Sánchez Toural , J. García-Pérez , R. Bernardo-Gavito , D. Granados , A. Andrino-Gómez , G. García , J. L. Pau , M. A. Ramos
show 1 more author
N. Gordillo
This is my paper · ORCID
classification cond-mat.mtrl-sciphysics.acc-phphysics.app-ph
keywords NVcentersnitrogen-vacancyionirradiationMeVbeamsdiamonddefectengineeringphotoluminescencequantumsensingvacancydensityoptimization
verification ladder T0 review T1 audit T2 compute T3 formal

The pith

A machine-rendered reading of the paper's core claim, the machinery that carries it, and where it could break.

The reading

The paper reports a way to engineer negatively charged nitrogen-vacancy (NV$^-$) centers in nitrogen-doped diamond using MeV ion beams rather than electrons or lasers. Its central claim is that after room-temperature irradiation with protons or bromine, annealing at 800–900 °C converts pre-existing substitutional nitrogen and irradiation-produced vacancies into NV$^-$ centers, with the vacancy density before annealing as the controlling parameter. The optimum is near $10^{19}$ vacancies per cubic centimeter, estimated to produce roughly 10 ppm of NV$^-$ centers in type Ib diamond containing 100–200 ppm nitrogen, without graphitization. If correct, the result provides a scalable, depth-controlled route to the dense NV$^-$ ensembles used in diamond-based quantum magnetic sensors.

What carries the argument

The central machinery is the irradiation–anneal sequence controlled by vacancy density. A Monte-Carlo damage simulation with a 52 eV displacement threshold converts ion energy, mass, and fluence into a depth-resolved vacancy density, and the paper uses the surface-near vacancy density as the engineering variable. Annealing at 800–900 °C mobilizes vacancies so they migrate to substitutional nitrogen, forming NV$^0$, and the negative charge state NV$^-$ is then reached by electron capture from a nearby nitrogen donor. The key quantitative target is the pre-anneal vacancy density: high enough near $10^{19}\,\mathrm{cm^{-3}}$ (roughly 60 ppm) to pair with a large fraction of the 100–200 ppm nitrogen, but low enough to avoid excessive damage that consumes nitrogen, creates competing defect complexes, or risks graphitization. Photoluminescence at the 637 nm and 575 nm zero-phonon lines distinguishes NV$^-$ and NV$^0$, and a Huang-Rhys factor correction converts their intensity ratio into a concentration ratio.

What would settle it

Take an H-III-2-type sample (2 MeV protons, $1.12\times10^{16}$ ions/cm$^2$, annealed at 800–900 °C), measure its NV$^-$ concentration by a method independent of electron-irradiation calibrations, such as optically detected magnetic resonance contrast against a calibrated ensemble or quantitative absorption at the 637 nm zero-phonon line, and compare with the 10–15 ppm estimate. If the independently measured density differs by more than the calibration uncertainty, the electron-derived estimates and the claimed optimal vacancy density would not transfer to ion irradiation.

Watch

Extended reading notes

Core claim

On its own terms, the paper establishes that NV$^-$ formation under MeV ion irradiation is a two-stage process: irradiation creates vacancies and interstitials but no detectable NV photoluminescence, while annealing supplies the thermal activation for vacancy migration and recombination with substitutional nitrogen, followed by electron capture that converts NV$^0$ to NV$^-$. Across proton irradiations at 2.0–3.5 MeV and bromine irradiations at 15–35 MeV, the yield tracks the calculated vacancy density, with the best results for surface-near vacancy densities near $10^{19}\,\mathrm{cm^{-3}}$. At higher densities, excessive damage and competition with the finite nitrogen pool suppress recombination; at lower densities, fewer NV$^-$ centers form. Using calibration curves from electron-irradiated diamond, the authors estimate 1–2 ppm of NV$^-$ at $2.23\times10^{15}$ H$^+$ cm$^{-2}$ and 10–15 ppm at $1.12\times10^{16}$ H$^+$ cm$^{-2}$ after annealing at 800–900 °C. Proton irradiation is presented as the more practical route because it gives a fairly uniform vacancy distribution over the first few micrometers, while bromine saturates NV creation in the first few microns; the paper explicitly cautions that the absolute densities rely on electron-irradiation calibrations.

Load-bearing premise

The load-bearing premise is that vacancy-to-NV conversion in ion-irradiated diamond follows the same calibration curves measured for electron-irradiated diamond; if ion tracks create different vacancy complexes or interstitial arrangements, the reported optimal density of $10^{19}$ vacancies per cubic centimeter and the roughly 10 ppm NV$^-$ estimate would be off.

Editorial extensions

If this is right

  • In type Ib diamond with roughly 100–200 ppm nitrogen, MeV ion irradiation plus an 800–900 °C anneal can produce NV$^-$ ensembles estimated at about 10 ppm, matching or exceeding commercial reference samples used for magnetometry, without graphitizing the diamond.
  • The relevant control parameter is the pre-anneal vacancy density, not the particular ion: both light hydrogen and heavy bromine beams converge on the same optimum, which simplifies process transfer between different accelerators.
  • Annealing at 800 °C and 900 °C gives similar NV$^-$ yields, so the lower temperature is sufficient, leaving thermal budget for other fabrication steps.
  • Because depth is set by ion energy, the same recipe can place dense NV$^-$ layers either in the first few micrometers or tens of micrometers deep, matching different sensor geometries.
  • The high NV$^-$/NV$^0$ ratio seen after irradiation and anneal means this route favors the negative charge state needed for magnetometry, in contrast to the reference CVD diamonds studied.

Reading between the lines

Editorial extensions of the paper, not claims the author makes directly.

  • A direct test of the vacancy-density optimum at other nitrogen contents follows from the paper's nitrogen-pool argument: doubling the nitrogen concentration should push the best pre-anneal vacancy density upward, since both the NV partner and the electron donor become more abundant.
  • The absence of NV signal immediately after irradiation, even at high vacancy densities, suggests the vacancies are stored in the lattice in a non-recombined form; measuring the neutral-vacancy GR1 absorption before and after annealing would directly track that reservoir.
  • If the electron-calibration transfer is the weak link, the same samples could be re-measured with an independent technique such as optically detected magnetic resonance contrast against a calibrated reference; a mismatch would revise the numeric optimum but not the mechanism.
  • For magnetoencephalography, the next practical question is coherence: whether the high-fluence proton recipe degrades the spin coherence time of the ensemble, a property this paper does not address.
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Editorial analysis

A structured set of objections, weighed in public.

Desk editor's note, referee report, and a circularity audit.

Referee Report

5 major / 5 minor

Summary. This manuscript reports photoluminescence (PL) experiments on type Ib HPHT synthetic diamond crystals irradiated at room temperature with MeV H+ and Br+6 ions and subsequently annealed at 800–900 °C. SRIM simulations are used to estimate vacancy-depth profiles. Three experiments vary ion species, energy, fluence, depth profile, and annealing temperature. The main observations are: (i) no NV PL is detected immediately after irradiation; (ii) after annealing, NV0 and NV− PL appears, with NV− dominant in the irradiated HPHT samples; (iii) heavier irradiation or higher fluence tends to reduce PL, and the authors infer an optimal initial vacancy density around 1×10^19 vac/cm3 leading to roughly 10 ppm NV− centers for 2 MeV protons; and (iv) they claim this is achieved without graphitization. The paper positions the work as a step toward scalable fabrication of NV− ensembles for quantum magnetometry.

Significance. The qualitative result—MeV ion irradiation followed by annealing creates NV− centers in nitrogen-doped diamond—is convincingly supported by the PL spectra and is of practical relevance for diamond-based quantum sensing. The systematic comparison of H and Br beams and the use of reference samples are strengths, as is the authors' explicit acknowledgment that their absolute calibration rests on electron-irradiation data. However, the quantitative headline (≈10 ppm NV− and an optimal vacancy density of ≈1×10^19 vac/cm3) is not yet established because it depends on transferring calibration curves from electron-irradiated samples, on SRIM damage estimates with acknowledged simplifications, and on single-sample measurements without error bars. If the calibration transfer is validated, the work would provide a useful roadmap for optimizing NV− ensembles; in its current form, the quantitative claim should be treated as a provisional estimate, and the paper would need either independent verification or suitably softened conclusions. The optimal-density prediction is falsifiable and worth testing.

major comments (5)
  1. [Section 3.3] The absolute NV− densities are derived by applying electron-irradiation calibration curves (Refs. [22,24]) to ion-irradiated samples, as stated in Section 3.3 and explicitly cautioned by the authors. This transfer is load-bearing for the abstract's '~10 ppm' and for the optimal vacancy density, but ion tracks produce different defect microstructures (dense cascades, vacancy clusters) whose annealing and NV-conversion efficiency can differ from electron irradiation. The [NV−]/[NV0] estimate also inherits the Huang-Rhys correction from Ref. [24]. I ask the authors to provide an independent concentration measurement (e.g., ODMR, absorption, or calibrated Raman/PL with cross-checked standards) for at least H-III-1 and H-III-2, or to reformulate the quantitative claims as relative and explicitly provisional.
  2. [Section 4 / Section 3.3] The claimed optimum at ~1×10^19 vac/cm3 is not a measured maximum. Experiment III has only two irradiated fluence points, which show increasing PL with fluence; Experiment I also shows monotonic behavior over its explored range. The number 1×10^19 vac/cm3 is the SRIM-computed near-surface vacancy density of the single sample H-III-2, not a value at which a downturn has been demonstrated. The conclusion should distinguish a tentative estimate from an established optimum, and additional fluence points around this value (with a downturn on the high-fluence side) are needed to support 'optimal'.
  3. [Section 2.3 / Tables 1–3] The vacancy densities that anchor the quantitative analysis are SRIM estimates computed with a linear approximation, without electronic stopping and without defect-defect interactions, as the paper acknowledges. Since these numbers are used to convert fluence into 'vac/cm3' and to define the optimum, the lack of uncertainty bounds or experimental damage validation (e.g., Raman or channeling on these samples) means the numerical optimum has unknown systematic error. Please provide at least a sensitivity estimate or direct damage measurement for the key conditions.
  4. [Abstract / Conclusions] The claim of achieving high NV− densities 'without graphitization' is not supported by any structural measurement presented in the manuscript. Dark regions visible after Br irradiation (Figure 4d) and the absence of NV PL before annealing do not rule out partial graphitization or amorphization. If this claim is retained, Raman spectroscopy or equivalent evidence should be provided; otherwise the statement should be qualified.
  5. [Figures 7–10] Each condition is represented by a single sample, and no error bars or repeated-measurement statistics are given for the PL intensities used to compare conditions and temperatures. This limits the strength of statements such as 'highest intensity', 'similar outcomes', and '[NV−]/[NV0] one order of magnitude higher'. At minimum, repeated PL measurements on the same sample should be shown for the central comparison (H-III-1 vs H-III-2), and ideally the key conditions should be repeated on independent samples.
minor comments (5)
  1. [Section 3.3 / Table 3] The fluence of H-III-1 is given as 2.23×10^15 cm^-2 in Table 3 but as 2.25×10^15 cm^-2 in the text; please make these consistent.
  2. [Section 2.1 / Section 3.3] The reference sample names are inconsistent (DNVTM1/DNVTM14 vs DNVB1/DNVB14); please unify the nomenclature.
  3. [Figure 3 caption] The sentence preceding the figure contains the Spanish phrase 'a) y b)'; use 'a) and b)'.
  4. [Section 2.1] The text says the samples contain 'less than 200 ppm nitrogen' while the abstract/introduction state '~100–200 ppm' and Section 3.3 uses '~100–200 ppm' when applying calibration curves; please clarify the nominal nitrogen concentration and its implied NV-conversion limit.
  5. [Section 2.2] The PL measurement section does not state the integration time, number of accumulations, spectral resolution, or spot size used for each displayed spectrum; these parameters are needed to judge intensity comparisons.

Circularity Check

0 steps flagged · score 0.0 of 10

No significant circularity: the central NV- density and optimal vacancy-density claims are empirical, calibrated against external references, and not reducible to the paper's own inputs.

full rationale

The derivation chain is empirical and self-contained: SRIM simulations provide vacancy densities from irradiation parameters with explicit caveats; PL spectra identify NV0 and NV- features; the [NV-]/[NV0] ratio is estimated using Huang-Rhys factors from Ref. [24]; and absolute NV- densities are read from calibration curves published in Refs. [22,24], which are external electron-irradiation studies. No parameter is fitted to the claimed outcome, and the ~10 ppm NV- and ~1e19 vac/cm3 values are not definitions of each other: the vacancy density comes from SRIM, while the NV- density comes from PL calibration. The 'optimal' value is inferred by comparing multiple samples with different fluences and vacancy densities, not by construction from a single fitted parameter. The only overlapping-author citation is Ref. [36], used to justify ignoring electronic stopping in damage estimates; that prior work is an independent channeling study, explicitly identified, and its use is a stated assumption rather than a circular reduction. The electron-to-ion calibration transfer is a legitimate uncertainty but not a circularity, since the external calibrations do not presuppose the present result. Therefore no step in the paper's argument reduces by definition or by self-citation to its own inputs.

Assumptions & free parameters 0 free parameters · 4 assumptions · 0 invented entities

The paper introduces no new entities or fitted parameters. The central estimates rest on four domain assumptions: SRIM damage modeling, transfer of electron-irradiation calibration curves, the Huang-Rhys correction factor, and the absence of graphitization under the chosen annealing conditions.

assumptions (4)
  • domain assumption Vacancy densities from SRIM simulations with a displacement energy of 52 eV and ignoring electronic stopping are a reliable first-order approximation.
    Invoked in Section 2.3 to compute all vacancy densities used in correlations. The electronic-stopping neglect is justified by the authors' prior work (Ref [36]).
  • domain assumption Calibration curves from electron-irradiated diamond (Refs [22,24]) can be transferred to estimate NV- densities in ion-irradiated samples.
    Used in Section 3.3 to convert PL intensities to absolute NV- concentrations for H-III-1 and H-III-2. The paper itself notes this should be treated with caution.
  • domain assumption The concentration ratio [NV-]/[NV0] is twice the ZPL intensity ratio due to Huang-Rhys factors.
    Stated in Section 3.3 and used to conclude that irradiated samples have one order of magnitude more NV- than NV0. The factor is taken from Ref [24].
  • domain assumption Annealing at 800 to 900 C for one hour with slow ramps activates NV formation without graphitization.
    The paper assumes these conditions are sufficient and safe, but does not present direct structural evidence (e.g., Raman or TEM) to confirm the absence of graphitization.

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Cite this review

Pith. "Pith review of Diamond-defect engineering of NV- centers using ion beam irradiation." pith.science (2026). https://pith.science/paper/FKTQFEXM

@misc{pith2026241203386,
  author       = {Pith},
  title        = {Pith review of: Diamond-defect engineering of NV- centers using ion beam irradiation},
  year         = {2026},
  howpublished = {\url{https://pith.science/paper/FKTQFEXM}},
  note         = {Machine review of arXiv:2412.03386}
}
read the original abstract

The interplay between ion beam modification techniques in the MeV range and the controlled generation of negatively charged nitrogen-vacancy (NV-) centers in nitrogen-doped synthetic diamond crystals is explored. An experimental approach employing both light (H+) and heavy (Br+6) ions was followed to assess their respective impacts on the creation of NV- centers, using different ion energies or fluences to generate varying amounts of vacancies. Photoluminescence spectroscopy was applied to characterize NV- and neutral NV0 centers. Initially, no NV centers were detected post-irradiation, despite the presence of substitutional nitrogen and vacancies. However, after annealing at 800C (and in some cases at 900C), most samples exhibited a high density of NV0 and especially NV- centers. This demonstrates that thermal treatment is essential for vacancy-nitrogen recombination and NV- formation, often through electron capture from nearby nitrogen atoms. Notably, we achieved high NV- densities without graphitization, which is essential for preserving the material's properties for quantum applications. This study underscores and quantifies the effectiveness of MeV-range ions in controlling vacancy distributions and highlights their potential for optimizing NV- center formation to enhance the sensitivity of diamond-based quantum magnetic sensors.

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Works this paper leans on

39 extracted references · 28 canonical work pages

  1. [24]

    Acosta, E

    V.M. Acosta, E. Bauch, M.P. Ledbetter, C. Santori, K.-M.C. Fu, P.E. Barclay, R.G. Beausoleil, H. Linget, J.F. Roch, F. Treussart, S. Chemerisov, W. Gawlik, D. Budker, Diamonds with a high density of nitrogen-vacancy centers for magnetometry applications, Phys. Rev. B 80 (2009) 115202. https://doi.org/10.1103/PhysRevB.80.115202

    doi:10.1103/physrevb.80.115202 2009

  2. [1]

    Kalish, The search for donors in diamond, Diam

    R. Kalish, The search for donors in diamond, Diam. Relat. Mater. 10 (2001) 1749–

    work page 2001

  3. [2]

    Prins, Using ion implantation to dope diamond—an update on selected issues, Diam

    J.F. Prins, Using ion implantation to dope diamond—an update on selected issues, Diam. Relat. Mater. 10 (2001) 1756–1764

    work page 2001

  4. [3]

    Vogel, J

    T. Vogel, J. Meijer, A. Zaitsev, Highly effective p-type doping of diamond by MeV-ion implantation of boron, Diam. Relat. Mater. 13 (2004) 1822–1825. https://doi.org/10.1016/j.diamond.2004.04.005

    work page doi:10.1016/j.diamond.2004.04.005 2004

  5. [4]

    Ekimov, V.A

    E.A. Ekimov, V.A. Sidorov, E.D. Bauer, N.N. Mel’nik, N.J. Curro, J.D. Thompson, S.M. Stishov, Superconductivity in diamond, Nature 428 (2004) 542–

    work page 2004

  6. [5]

    Agulló-Rueda, M.D

    F. Agulló-Rueda, M.D. Ynsa, N. Gordillo, A. Maira, D. Moreno-Cerrada, M.A. Ramos, Micro-Raman spectroscopy of near-surface damage in diamond irradiated with 9-MeV boron ions, Diam. Relat. Mater. 72 (2017) 94–98. https://doi.org/10.1016/j.diamond.2017.01.010

    work page doi:10.1016/j.diamond.2017.01.010 2017

  7. [6]

    Agulló-Rueda, N

    F. Agulló-Rueda, N. Gordillo, M.D. Ynsa, A. Maira, J. Cañas, M.A. Ramos, Lattice damage in 9-MeV-carbon irradiated diamond and its recovery after annealing, Carbon 123 (2017) 334–343. https://doi.org/10.1016/j.carbon.2017.07.076

    work page doi:10.1016/j.carbon.2017.07.076 2017

  8. [7]

    Irradiation induced modification of the superconducting properties of heavily boron doped diamond

    D. Creedon, Y. Jiang, K. Ganesan, A. Stacey, T. Kageura, H. Kawarada, J. McCallum, B. Johnson, S. Prawer, D. Jamieson, Irradiation induced modification of the superconducting properties of heavily boron doped diamond, ArXiv180901800 Cond-Mat (2018). http://arxiv.org/abs/1809.01800 (accessed September 10, 2018). 19

    work page Pith review arXiv 2018

Show all 39 references
  1. [8]

    Barzola-Quiquia, M

    J. Barzola-Quiquia, M. Stiller, P.D. Esquinazi, A. Molle, R. Wunderlich, S. Pezzagna, J. Meijer, W. Kossack, S. Buga, Unconventional Magnetization below 25 K in Nitrogen-doped Diamond provides hints for the existence of Superconductivity and Superparamagnetism, Sci. Rep. 9 (20...

    2019 doi

  2. [9]

    G. Hou, J. Ye, J. Han, Z. Han, X. Yu, Research and Application Progress of Boron-doped Diamond Films, Highlights Sci. Eng. Technol. 58 (2023) 52–58. https://doi.org/10.54097/hset.v58i.10022

    2023 doi

  3. [10]

    Zaitsev, K.S

    A.M. Zaitsev, K.S. Moe, W. Wang, Defect transformations in nitrogen-doped CVD diamond during irradiation and annealing, Diam. Relat. Mater. 88 (2018) 237–255. https://doi.org/10.1016/j.diamond.2018.07.017

    2018 doi

  4. [11]

    Zheng, C

    Y. Zheng, C. Li, J. Liu, J. Wei, H. Ye, Diamond with nitrogen: states, control, and applications, Funct. Diam. 1 (2021) 63–82. https://doi.org/10.1080/26941112.2021.1877021

    2021 arXiv

  5. [12]

    Jiménez-Riobóo, N

    R.J. Jiménez-Riobóo, N. Gordillo, A. de Andrés, A. Redondo-Cubero, M. Moratalla, M.A. Ramos, M.D. Ynsa, Boron-doped diamond by 9 MeV microbeam implantation: Damage and recovery, Carbon 208 (2023) 421–431. https://doi.org/10.1016/j.carbon.2023.04.004

    2023 doi

  6. [13]

    G. Jia, Y. Zhang, X. Kong, C. Huangfu, J. Hao, W. Wang, Z. Song, H. Wang, K. Wang, The near surface damage and recovery of low nitrogen diamond implanted with MeV phosphorus ions, Appl. Surf. Sci. 661 (2024) 160080. https://doi.org/10.1016/j.apsusc.2024.160080

    2024

  7. [14]

    Doherty, N.B

    M.W. Doherty, N.B. Manson, P. Delaney, F. Jelezko, J. Wrachtrup, L.C.L. Hollenberg, The nitrogen-vacancy colour centre in diamond, Phys. Rep. 528 (2013) 1–45. https://doi.org/10.1016/j.physrep.2013.02.001

    2013 doi

  8. [15]

    Childress, R

    L. Childress, R. Walsworth, M. Lukin, Atom-like crystal defects: From quantum computers to biological sensors, Phys. Today 67 (2014) 38–43. https://doi.org/10.1063/PT.3.2549

    2014 doi

  9. [16]

    Rondin, J.-P

    L. Rondin, J.-P. Tetienne, T. Hingant, J.-F. Roch, P. Maletinsky, V. Jacques, Magnetometry with nitrogen-vacancy defects in diamond, Rep. Prog. Phys. 77 (2014) 056503. https://doi.org/10.1088/0034-4885/77/5/056503

    2014 doi

  10. [17]

    Manson, M.S.J

    N.B. Manson, M.S.J. Barson, M. Hedges, P. Singh, S. Stearn, Y. Chen, L. Oberg, C.A. Meriles, M.W. Doherty, NV with nitrogen, (2023). https://doi.org/10.48550/arXiv.2311.09570

    2023 doi arXiv

  11. [18]

    Barry, J.M

    J.F. Barry, J.M. Schloss, E. Bauch, M.J. Turner, C.A. Hart, L.M. Pham, R.L. Walsworth, Sensitivity optimization for NV-diamond magnetometry, Rev. Mod. Phys. 92 (2020) 015004. https://doi.org/10.1103/RevModPhys.92.015004

    2020 doi

  12. [19]

    Sánchez Toural, V

    J.L. Sánchez Toural, V. Marzoa, R. Bernardo-Gavito, J.L. Pau, D. Granados, Hands-On Quantum Sensing with NV− Centers in Diamonds, C 9 (2023) 16. https://doi.org/10.3390/c9010016

    2023 doi

  13. [20]

    R. Guo, K. Wang, Y. Zhang, Z. Xiao, G. Jia, H. Wang, Y. Wu, Y. Tian, Adjustable charge states of nitrogen-vacancy centers in low-nitrogen diamond after electron irradiation and subsequent annealing, Appl. Phys. Lett. 117 (2020). https://doi.org/10.1063/5.0023369

    2020 doi

  14. [21]

    K. Wang, Z. Xiao, R. Guo, G. Jia, Y. Zhang, H. Wang, Y. Wu, Y. Tian, Temperature dependence of optical centers in 200 keV electron irradiated β- Ga2O3, Mater. Today Commun. 29 (2021). https://doi.org/10.1016/j.mtcomm.2021.102764

    2021

  15. [22]

    Zhang, S.-Y

    X.-M. Zhang, S.-Y. Wang, Y.-B. Shi, H. Yuan, Z.-M. Ma, F. Wang, Z.-D. Lin, L. Qin, J. Liu, Quantitative analysis of spectral characteristics and concentration of 20 ensembles of NV− centers in diamond, Diam. Relat. Mater. 76 (2017) 21–26. https://doi.org/10.1016/j.diamond.2017.03.020

    2017 doi

  16. [23]

    Fraczek, V.G

    E. Fraczek, V.G. Savitski, M. Dale, B.G. Breeze, P. Diggle, M. Markham, A. Bennett, H. Dhillon, M.E. Newton, A.J. Kemp, Laser spectroscopy of NV- and NV0 colour centres in synthetic diamond, Opt. Mater. Express 7 (2017) 2571–

    2017

  17. [25]

    Chen, P.S

    Y.-C. Chen, P.S. Salter, S. Knauer, L. Weng, A.C. Frangeskou, C.J. Stephen, S.N. Ishmael, P.R. Dolan, S. Johnson, B.L. Green, G.W. Morley, M.E. Newton, J.G. Rarity, M.J. Booth, J.M. Smith, Laser writing of coherent colour centres in diamond, Nat. Photonics 11 (2017) 77–80. htt...

    2017 doi

  18. [26]

    Subedi, V.V

    S.D. Subedi, V.V. Fedorov, J. Peppers, D.V. Martyshkin, S.B. Mirov, L. Shao, M. Loncar, Laser spectroscopic characterization of negatively charged nitrogen- vacancy (NV−) centers in diamond, Opt. Mater. Express 9 (2019) 2076–2087. https://doi.org/10.1364/OME.9.002076

    2019 doi

  19. [27]

    Schwartz, S

    J. Schwartz, S. Aloni, D.F. Ogletree, M. Tomut, M. Bender, D. Severin, C. Trautmann, I.W. Rangelow, T. Schenkel, Local formation of nitrogen-vacancy centers in diamond by swift heavy ions, J. Appl. Phys. 116 (2014) 214107. https://doi.org/10.1063/1.4903075

    2014 doi

  20. [28]

    Santori, P.E

    C. Santori, P.E. Barclay, K.-M.C. Fu, R.G. Beausoleil, Vertical distribution of nitrogen-vacancy centers in diamond formed by ion implantation and annealing, Phys. Rev. B 79 (2009) 125313. https://doi.org/10.1103/PhysRevB.79.125313

    2009 doi

  21. [29]

    Nieto Hernandez, G

    E. Nieto Hernandez, G. Andrini, A. Crnjac, M. Brajkovic, F. Picariello, E. Corte, V. Pugliese, M. Matijević, P. Aprà, V. Varzi, J. Forneris, M. Genovese, Z. Siketic, M. Jaksic, S. Ditalia Tchernij, Efficient Fabrication of High-Density Ensembles of Color Centers via Ion Implan...

    doi

  22. [30]

    R.E. Lake, A. Persaud, C. Christian, E.S. Barnard, E.M. Chan, A.A. Bettiol, M. Tomut, C. Trautmann, T. Schenkel, Direct formation of nitrogen-vacancy centers in nitrogen doped diamond along the trajectories of swift heavy ions, Appl. Phys. Lett. 118 (2021) 084002. https://doi....

    2021 doi

  23. [31]

    Lühmann, N

    T. Lühmann, N. Raatz, R. John, M. Lesik, J. Rödiger, M. Portail, D. Wildanger, F. Kleißler, K. Nordlund, A. Zaitsev, J.-F. Roch, A. Tallaire, J. Meijer, S. Pezzagna, Screening and engineering of colour centres in diamond, J. Phys. Appl. Phys. 51 (2018) 483002. https://doi.org/...

    2018 doi

  24. [32]

    https://www.e6.com, Element Six Synthetic Industrial Diamonds

  25. [33]

    Zaitsev, Optical Properties of Diamond: A Data Handbook, Springer Science & Business Media, 2013

    A.M. Zaitsev, Optical Properties of Diamond: A Data Handbook, Springer Science & Business Media, 2013

    2013

  26. [34]

    Redondo-Cubero, M.J.G

    A. Redondo-Cubero, M.J.G. Borge, N. Gordillo, P.C. Gutiérrez, J. Olivares, R. Pérez Casero, M.D. Ynsa, Current status and future developments of the ion beam facility at the centre of micro-analysis of materials in Madrid, Eur. Phys. J. Plus 136 (2021) 175. https://doi.org/10....

    2021 doi

  27. [35]

    J. F. Ziegler, J. P. Biersack, U. Littmark, The Stopping and Ranges of Ions in solids, Pergamon Press, New York, 1985. http://www.srim.org/ 21

    1985

  28. [36]

    García, M

    G. García, M. Díaz-Híjar, V. Tormo-Márquez, I. Preda, O. Peña-Rodríguez, J. Olivares, Structural damage on single-crystal diamond by swift heavy ion irradiation, Diam. Relat. Mater. 58 (2015) 226–229. https://doi.org/10.1016/j.diamond.2015.08.014

    2015 doi

  29. [545]

    https://doi.org/10.1038/nature02449

    doi

  30. [1755]

    https://doi.org/10.1016/S0925-9635(01)00426-5

    doi

  31. [2585]

    https://doi.org/10.1364/OME.7.002571

    doi

Pith tools

Reviewed August 11, 2026 · model on record in the stance chip above.