MeV H+ and Br+6 irradiation of nitrogen-doped diamond followed by annealing produces NV- centers, with an optimal vacancy density near 1e19 cm-3 yielding an estimated 10 ppm NV-.
Prins, Using ion implantation to dope diamond—an update on selected issues, Diam
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Diamond-defect engineering of NV- centers using ion beam irradiation
MeV H+ and Br+6 irradiation of nitrogen-doped diamond followed by annealing produces NV- centers, with an optimal vacancy density near 1e19 cm-3 yielding an estimated 10 ppm NV-.