A GaP interlayer yields symmetric, low-density InAs/InP quantum dots whose extrapolated low-power telecom linewidths approach the transform limit (best 2.8 ± 1.8 ΓTL).
J.; Kaminska, K.; Barrios, P.; Lu, Z.; Liu, J
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Approaching transform-limited linewidths in telecom-wavelength transitions of ungated quantum dots
A GaP interlayer yields symmetric, low-density InAs/InP quantum dots whose extrapolated low-power telecom linewidths approach the transform limit (best 2.8 ± 1.8 ΓTL).