STM shows an unpaired Star-of-David layer with an odd electron count is insulating, supporting Mott localisation as sufficient to gap 1T-TaS2 and linking insulator-metal transitions to interlayer stacking.
Title resolution pending
1 Pith paper cite this work. Polarity classification is still indexing.
1
Pith paper citing it
fields
cond-mat.str-el 1years
2019 1verdicts
CONDITIONAL 1representative citing papers
citing papers explorer
-
Mottness versus unit-cell doubling as the driver of the insulating state in 1T-TaS2
STM shows an unpaired Star-of-David layer with an odd electron count is insulating, supporting Mott localisation as sufficient to gap 1T-TaS2 and linking insulator-metal transitions to interlayer stacking.