Zr2SN2 thin films are transparent across most of the visible range, show an average refractive index of 2.95, and exhibit degenerate n-type conductivity with carrier density above 10^20 cm-3 and mobility above 8 cm2 V-1 s-1.
Ganose and Adam J
5 Pith papers cite this work. Polarity classification is still indexing.
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Pith papers citing it
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2026 5verdicts
UNVERDICTED 5representative citing papers
Synthesis and characterization of bulk type-II superconductivity in three new M Pb4-x Bix compounds (M=Au, Pd, Rh) with Tc of 4.9 K, 4.2 K and 3.4 K in the PtPb3Bi structure type.
Ab initio DFT calculations find zinc vacancies and interstitials dominate defects in Zn3P2, producing p-type behavior via shallow acceptors, with Frenkel pair formation partially compensating conductivity and thermodynamically limiting n-type doping.
A pipeline samples site-disordered material configurations with 400 virtual cells when the supercell is large enough, improving computational feasibility over quasirandom or cluster expansion methods.
SrI2 post-annealing of sputtered SrZn2P2 thin films causes grain growth, reduces diffraction peak broadening, preserves phase purity, and boosts photoluminescence intensity and uniformity near the 1.8 eV direct bandgap.
citing papers explorer
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A sulfonitride transparent conductive thin film with ultra-high refractive index
Zr2SN2 thin films are transparent across most of the visible range, show an average refractive index of 2.95, and exhibit degenerate n-type conductivity with carrier density above 10^20 cm-3 and mobility above 8 cm2 V-1 s-1.
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New Superconductors in the PtPb$_3$Bi Structure Type
Synthesis and characterization of bulk type-II superconductivity in three new M Pb4-x Bix compounds (M=Au, Pd, Rh) with Tc of 4.9 K, 4.2 K and 3.4 K in the PtPb3Bi structure type.
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Intrinsic Point Defects and Frenkel Pair Formation in Photovoltaic Absorber Zn$_3$P$_2$: Regulating $p$-type Conductivity through Growth and Annealing Conditions
Ab initio DFT calculations find zinc vacancies and interstitials dominate defects in Zn3P2, producing p-type behavior via shallow acceptors, with Frenkel pair formation partially compensating conductivity and thermodynamically limiting n-type doping.
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Virp: neural network-accelerated prediction of physical properties in site-disordered materials
A pipeline samples site-disordered material configurations with 400 virtual cells when the supercell is large enough, improving computational feasibility over quasirandom or cluster expansion methods.
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Thin film synthesis of SrZn2P2 with SrI2 post-annealing for enhanced crystallinity and optoelectronic quality
SrI2 post-annealing of sputtered SrZn2P2 thin films causes grain growth, reduces diffraction peak broadening, preserves phase purity, and boosts photoluminescence intensity and uniformity near the 1.8 eV direct bandgap.