Commercial SiC MOSFETs exhibit large gate hysteresis, threshold voltage shifts, and subthreshold swing deterioration at deep cryogenic temperatures, indicating electrostatic instability likely caused by carrier freeze-out and high interface trap density.
Kimoto, Material science and device physics in SiC technology for high-voltage power devices, Japanese Journal of Applied Physics 54, 040103 (2015)
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Reproducibility and variability in commercial SiC MOSFETs at deep-cryogenic temperatures
Commercial SiC MOSFETs exhibit large gate hysteresis, threshold voltage shifts, and subthreshold swing deterioration at deep cryogenic temperatures, indicating electrostatic instability likely caused by carrier freeze-out and high interface trap density.