Visible light modulates exchange bias in PMN-PZT/FeGa/IrMn heterostructures at room temperature, correlating magnetization states with light intensity for potential opto-magnetic memory.
Absorption coefficient of silicon for solar cell calculations
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An analytic PDE model for VUV SiPMs is fitted to 350-830 nm measurements at 163 K and extrapolated to predict performance in liquid xenon and argon.
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Light-modulated exchange bias in multiferroic heterostructures
Visible light modulates exchange bias in PMN-PZT/FeGa/IrMn heterostructures at room temperature, correlating magnetization states with light intensity for potential opto-magnetic memory.
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Demonstrating a broadband Photon Detection Efficiency model on VUV sensitive Silicon Photomultipliers
An analytic PDE model for VUV SiPMs is fitted to 350-830 nm measurements at 163 K and extrapolated to predict performance in liquid xenon and argon.