A discrete SiGe BJT transimpedance front-end plus two LTC6431 stages gives a preamplifier board with sub-femtocoulomb equivalent noise charge and tens-of-picoseconds timing for LGAD, PIN, and 3D silicon detectors.
Brundu et al.,Accuratemodelling of 3D-trenchsilicon sensorwithenhanced timing performance and comparison withtestbeam measurements,JINST16(2021) P09028
1 Pith paper cite this work. Polarity classification is still indexing.
1
Pith paper citing it
citation-role summary
background 1
citation-polarity summary
fields
physics.ins-det 1years
2026 1verdicts
CONDITIONAL 1roles
background 1polarities
unclear 1representative citing papers
citing papers explorer
-
A High Gain Preamplifier Board for Low Charge Semiconductor Detectors
A discrete SiGe BJT transimpedance front-end plus two LTC6431 stages gives a preamplifier board with sub-femtocoulomb equivalent noise charge and tens-of-picoseconds timing for LGAD, PIN, and 3D silicon detectors.