In top-contacted 2D semiconductors the measured Schottky barrier is a nonlocal edge response to nearby channel defects, producing metal-dependent SBH swings of hundreds of meV that match DFT and experimental spreads.
\ Heinz ,\ title title Atomically Thin MoS _2 : A New Direct-Gap Semiconductor , \ 10.1103/PhysRevLett.105.136805 journal journal Phys
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A ray-tracing framework that models sub-surface scattering via symmetry-constrained unitary quantum collisions, pre-computable on quantum computers to produce BSDFs for new coherent materials.
Defect charge transition levels in ReS2 remain nearly unchanged from monolayer to bulk due to electronic energy minimization and structural relaxation counteracting quantum confinement and reduced dielectric screening, aided by weak interlayer coupling.
An integrated UHV MBE-plus-optical-spectroscopy cluster enables in-situ, spatially resolved photoluminescence and Raman measurements on as-grown reactive 2D semiconductors while preserving pristine surfaces.
Wafer-scale MOCVD-grown GaSe 2D nanosheets show defect-induced localized emission with single-photon character (g2(0)=0.15) suitable for classical and non-classical light sources.
DFT plus Monte Carlo simulations predict itinerant ferromagnetism with Tc exceeding 160 K in p-doped MoS2 monolayers at 9% V concentration.
CrSi2N4 monolayer is stable with 0.58-2.16 eV indirect bandgap, high absorption, 3.5 mW/mK² thermoelectric power factor, and strain-reduced hydrogen adsorption energy to 0.46 eV for better HER.
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Nonlocal Electrostatic Origin of Schottky-Barrier Variability in 2D Contacts
In top-contacted 2D semiconductors the measured Schottky barrier is a nonlocal edge response to nearby channel defects, producing metal-dependent SBH swings of hundreds of meV that match DFT and experimental spreads.
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Rendering Coherent Scattering via Quantum Collision Models
A ray-tracing framework that models sub-surface scattering via symmetry-constrained unitary quantum collisions, pre-computable on quantum computers to produce BSDFs for new coherent materials.
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Persistence of Layer-Tolerant Defect Levels in ReS2
Defect charge transition levels in ReS2 remain nearly unchanged from monolayer to bulk due to electronic energy minimization and structural relaxation counteracting quantum confinement and reduced dielectric screening, aided by weak interlayer coupling.
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Ultra-high-vacuum cluster tool for epitaxial synthesis and optical spectroscopy of reactive 2D materials
An integrated UHV MBE-plus-optical-spectroscopy cluster enables in-situ, spatially resolved photoluminescence and Raman measurements on as-grown reactive 2D semiconductors while preserving pristine surfaces.
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Localized Excitonic Emission in Wafer-Scale MOCVD-Grown GaSe 2D Nanosheets for Classical and Non-Classical Light Sources
Wafer-scale MOCVD-grown GaSe 2D nanosheets show defect-induced localized emission with single-photon character (g2(0)=0.15) suitable for classical and non-classical light sources.
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Itinerant Ferromagnetism in p-doped Monolayers of MoS2
DFT plus Monte Carlo simulations predict itinerant ferromagnetism with Tc exceeding 160 K in p-doped MoS2 monolayers at 9% V concentration.
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Strain-Enhanced Hydrogen Evolution, Electrical, Optical, and Thermoelectric Properties of the Multifunctional 2D CrSi2N4 Monolayer
CrSi2N4 monolayer is stable with 0.58-2.16 eV indirect bandgap, high absorption, 3.5 mW/mK² thermoelectric power factor, and strain-reduced hydrogen adsorption energy to 0.46 eV for better HER.