In 4H-SiC, the silicon vacancy spin relaxation time T1 stays near 300 microseconds across irradiation types and fluences, while the spin coherence time T2 decreases with emitter density according to an empirical two-parameter scaling formula.
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Influence of irradiation on defect spin coherence in silicon carbide
In 4H-SiC, the silicon vacancy spin relaxation time T1 stays near 300 microseconds across irradiation types and fluences, while the spin coherence time T2 decreases with emitter density according to an empirical two-parameter scaling formula.