Epitaxial wurtzite MgSnN2 on 4H-SiC exhibits 10^5 cm^-1 visible absorption and 2.4 eV photoluminescence, establishing an earth-abundant nitride for green optoelectronics and photovoltaics.
Low Al-content n -type AlxGa1−xN layers with a high -electron-mobility grown by hot -wall metalorganic chemical vapor deposition
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Epitaxial MgSnN2 on 4H-SiC (0001): An Earth-Abundant Nitride for Green Optoelectronics and Photovoltaics
Epitaxial wurtzite MgSnN2 on 4H-SiC exhibits 10^5 cm^-1 visible absorption and 2.4 eV photoluminescence, establishing an earth-abundant nitride for green optoelectronics and photovoltaics.