FM-AFM energy dissipation signals reveal ring-shaped patterns from nitridation-induced fast trap states at SiO2/4H-SiC interfaces, with energies extending toward the conduction band edge.
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Individual Characterization of Fast-Responding Trap States at the NO-Annealed SiO$_2$/4H-SiC Interface
FM-AFM energy dissipation signals reveal ring-shaped patterns from nitridation-induced fast trap states at SiO2/4H-SiC interfaces, with energies extending toward the conduction band edge.