TTM-MD simulations reveal that swift heavy ion irradiation of GaN produces two distinct hillock morphologies depending on electronic energy loss, with temperature-dependent enlargement and nanochannel formation above 1200 K driven by liquid Ga fluidity.
Femtosecond Ultrafast Dynamics Simulations of Typical Semiconductor Materials under Swift Heavy Ion Irradiation
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Unveiling Nanoscale Surface Damage Dynamics in Swift Heavy Ion Irradiated Gallium Nitride
TTM-MD simulations reveal that swift heavy ion irradiation of GaN produces two distinct hillock morphologies depending on electronic energy loss, with temperature-dependent enlargement and nanochannel formation above 1200 K driven by liquid Ga fluidity.