Unveiling Nanoscale Surface Damage Dynamics in Swift Heavy Ion Irradiated Gallium Nitride

Chaohui He; Chuanjian Yao; Hang Zang; Huan He; Jianan Wei; Jiayu Liang; Shaowei He; Tan Shi; Wenbo Liu; Wenlong Liao

REVIEW 4 major objections 5 minor 14 references

Unveiling Nanoscale Surface Damage Dynamics in Swift Heavy Ion Irradiated Gallium Nitride

T0 review · 4 major / 5 minor · reviewed 2026-07-09 · glm-5.2

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Pith's one-line read Ion energy loss governs nanoscale hillock shape in GaN

desk verdict Two distinct hillock morphologies in GaN under SHI irradiation, predicted via TTM-MD, with a temperature threshold for nanochannel formation — but the interatomic potential is unvalidated for the surface phase transitions it predicts. read the letter →

arxiv 2607.07092 v1 pith:U3XHGI7V submitted 2026-07-08 cond-mat.mtrl-sci

Jiayu Liang , Shaowei He , Wenlong Liao , Tan Shi , Hang Zang , Yonghong Li , Wenbo Liu , Xiaojun Fu

show 4 more authors

Chuanjian Yao Huan He Jianan Wei Chaohui He

This is my paper · ORCID

classification cond-mat.mtrl-sci PACS 61.80.Az61.72.Ff64.70.Nd

keywords hillocksgalliumhillockirradiationsurfaceunderdamagedynamics

verification ladder T0 review T1 audit T2 compute T3 formal

The pith

A machine-rendered reading of the paper's core claim, the machinery that carries it, and where it could break.

The reading

This paper uses coupled two-temperature-model molecular dynamics simulations to argue that swift heavy ion irradiation of gallium nitride produces two distinct surface hillock morphologies determined by the electronic energy loss (Se) of the incident ion. At moderate Se (18.2 keV/nm, Kr ions), pressure-driven extrusion of molten material produces bell-shaped hillocks roughly 10 nm wide and 2 nm tall. At high Se (40.2 keV/nm, Ta ions), intense sputtering excavates a central cavity, leaving crater-rim hillocks with a penetrating nanochannel. The hillocks are Ga-rich because nitrogen escapes as N2 gas during the thermal spike, leaving behind liquid gallium clusters and recrystallized GaN. Rapid recrystallization at the hillock periphery traps metastable zincblende-structure GaN nanodomains, which correlate spatially with screw dislocations. Elevated ambient temperatures enlarge hillock dimensions without changing their fundamental morphology; above 1200 K, the reduced viscosity of liquid gallium allows molten material to flow out more readily, producing deep penetrating nanochannels.

What carries the argument

The argument rests on coupled two-temperature-model molecular dynamics (TTM-MD) simulations of 430 MeV Kr and 1171 MeV Ta ions incident along [0001] in GaN, with ambient temperatures varied from 300 K to 1800 K. The key mechanistic chain is: (1) electronic energy loss sets the thermal spike intensity, (2) the spike melts GaN and decomposes it into liquid Ga plus N2 gas, (3) nitrogen escapes the near-surface region leaving Ga-rich molten material, (4) pressure gradients extrude or sputter this material to form hillocks whose shape depends on sputtering intensity, (5) rapid recrystallization from the outer edge inward traps metastable zincblende nanodomains, and (6) elevated temperature lowers

What would settle it

If experiments irradiating GaN with Kr and Ta ions at controlled temperatures fail to observe the predicted morphological dichotomy (bell-shaped vs. crater-rim), the zincblende nanodomains at hillock peripheries, or the nanochannel penetration onset above 1200 K, the simulation predictions would be contradicted. In particular, if high-resolution TEM of irradiated GaN surfaces shows no zincblende phase or shows hillocks with significantly different composition than Ga-rich, the core mechanistic claims would be undermined.

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Extended reading notes

Core claim

The central claim is that the electronic energy loss of a swift heavy ion dictates which of two surface damage morphologies forms on GaN, with the transition governed by whether the thermal spike is strong enough to cause sustained sputtering and central excavation rather than mere extrusion. The hillock material is inherently Ga-rich due to nitrogen loss, and the rapid cooling that follows the thermal spike metastably traps zincblende GaN nanodomains at hillock edges. Temperature acts as an amplifier: it enlarges existing features and, above a threshold near 1200 K, enables liquid gallium's low viscosity to drive nanochannel penetration.

Load-bearing premise

The simulations assume that the interatomic potential and TTM-MD framework accurately capture coupled electronic-lattice dynamics, liquid gallium rheology, and the wurtzite-to-zincblende phase transition under the extreme non-equilibrium conditions of a thermal spike at a free surface. If the potential misrepresents liquid Ga viscosity or the energy landscape between wurtzite and zincblende phases, the temperature-dependent nanochannel threshold and zincblende nanodomain分布 (d

Editorial extensions

If this is right

Device engineers can use the Se threshold separating bell-shaped from crater-rim morphology to predict whether a given radiation environment produces benign protrusions or penetrating structural damage in GaN components.
The identification of zincblende nanodomains as a recrystallization byproduct suggests that swift heavy ion irradiation may locally alter the electronic band structure of GaN at damage sites, since zincblende GaN has different optoelectronic properties from the wurtzite phase.
The 1200 K nanochannel penetration threshold provides a concrete design constraint: GaN devices operating above this temperature under radiation exposure face qualitatively different failure modes involving deep material loss rather than surface protrusion.
The correlation between zincblende nanodomains and screw dislocations implies that pre-existing dislocation networks could serve as nucleation sites for phase transformation under irradiation, linking crystal quality to radiation tolerance.

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Editorial analysis

A structured set of objections, weighed in public.

Desk editor's note, referee report, and a circularity audit.

Desk Editor's Note

read the letter

This paper uses TTM-MD to simulate surface hillock formation in GaN under swift heavy ion irradiation, predicting two distinct morphologies: bell-shaped hillocks at lower Se (18.2 keV/nm Kr) and crater-rim hillocks with central holes at higher Se (40.2 keV/nm Ta). The temperature-dependent evolution up to 1800 K, including a threshold above 1200 K for penetrating nanochannel formation driven by reduced liquid Ga viscosity, is the most novel output. The pressure-driven mechanism distinguishing the two morphologies is physically plausible and internally consistent with the simulation snapshots. The Ga-rich composition claim, supported by RDF analysis showing liquid Ga and recrystallized GaN peaks, is a reasonable deduction from N2 escape dynamics. The zincblende nanodomain distribution at hillock peripheries, correlated with screw dislocations, is a genuinely new microstructural prediction. The stress-test concern about potential validation is the right one to press. The paper defers all potential details and validation to supplementary materials and self-cited ref 22, whose publication status is unclear. The zincblende prediction is the most fragile result — if the potential artificially lowers the wurtzite-to-zincblende barrier or misrepresents the energy landscape under non-equilibrium surface conditions, the nanodomain distribution could be an artifact. The N2 formation mechanism requires a reactive potential validated for bond-breaking under thermal spike conditions, and the paper does not address this. The secondary concern about periodic-image effects at 1800 K is also legitimate: the predicted bell-shaped hillock diameter of 17.7 nm at 1800 K exceeds half the 30 nm lateral cell dimension, which could inflate the lateral expansion claim. The reader's conditional verdict and scores are about right. The novelty is real — nobody has done atomistic surface hillock formation in GaN before — but the load-bearing assumption about the potential is untested in the main text. This deserves a serious referee who checks the supplementary materials for potential validation and presses the authors on finite-size effects at the highest temperatures. The core mechanism is sound enough to warrant that level of scrutiny.

Referee Report

4 major / 5 minor

Summary. This manuscript employs a two-temperature model coupled with molecular dynamics (TTM-MD) to investigate the atomistic mechanisms of surface hillock formation in GaN under swift heavy ion (SHI) irradiation. Two ion species are studied: 430 MeV Kr (Se = 18.2 keV/nm) and 1171 MeV Ta (Se = 40.2 keV/nm), producing bell-shaped hillocks and crater-rim hillocks with central holes, respectively. The authors report that hillocks are Ga-rich, containing liquid Ga clusters and recrystallized GaN with metastable zincblende nanodomains at their peripheries. Temperature-dependent simulations (300–1800 K) show lateral expansion of hillocks and, above 1200 K under Ta irradiation, the formation of penetrating nanochannels attributed to reduced liquid Ga viscosity. The study bridges atomistic simulations with macroscopic surface degradation, which is relevant for GaN device reliability in radiation environments.

Significance. The paper addresses a practically important problem: the surface damage morphology of GaN under SHI irradiation and its temperature dependence, which is relevant for aerospace and nuclear applications. The identification of two distinct hillock morphologies as a function of Se, and the prediction of zincblende nanodomain formation at hillock peripheries, are potentially valuable contributions. The temperature-dependent channel-formation threshold at 1200 K is a falsifiable prediction that could be tested experimentally. However, the significance is tempered by the absence of direct experimental validation and the reliance on self-cited prior work for key mechanistic foundations.

major comments (4)

The interatomic potential and TTM-MD framework are not specified in the main text, and no validation of the potential's accuracy for the key quantities underlying the central predictions is provided. Specifically, the zincblende nanodomain result depends on the wurtzite-to-zincblende energy landscape, the Ga-rich hillock composition depends on GaN decomposition into liquid Ga + N2, and the nanochannel threshold depends on liquid Ga viscosity/surface tension at thermal-spike temperatures. If the potential misrepresents any of these, the headline results could be simulation artifacts. The authors should state which potential is used in the main text and provide at least a brief benchmark against DFT or experimental data for these three quantities. (See simulation setup section and Fig. 3.)
Reference 22 (Liang, He, et al., 'Atomistic Mechanisms of Temperature-Dependent Ion Track Formation in Gallium Nitride under Swift Heavy Ion Irradiation') is cited for the melt-recrystallization mechanism, GaN decomposition into liquid Ga + N2, and zincblende nanodomain formation along ion tracks. These are foundational to the current paper's analysis, yet the publication status of ref 22 is unclear from the reference list (no journal/volume/year given). The authors should clarify whether ref 22 is published or a preprint, and if the latter, the key supporting evidence should be summarized in the present manuscript so that the reader can independently evaluate the claims.
There is no quantitative comparison with experimental hillock morphologies, dimensions, or ion track radii for GaN under comparable irradiation conditions. The paper reports, for example, a bell-shaped hillock diameter of 9.6 nm and height of 2.1 nm under Kr irradiation, and a crater depth of 19.7 nm under Ta irradiation, but does not discuss whether these are consistent with available AFM/TEM data (e.g., refs 12–15). Without at least an order-of-magnitude comparison, it is difficult to assess whether the simulations capture the correct physics or whether the results are internally consistent but unvalidated. A table or paragraph comparing simulated and experimental dimensions would substantially strengthen the paper.
At 1800 K, the predicted bell-shaped hillock diameter is 17.7 nm (Fig. 4a), which exceeds half the 30 nm lateral cell dimension. This raises the possibility that periodic-image interactions between adjacent simulation cells could artificially inflate the lateral expansion at high temperatures. The authors should address whether finite-size effects have been tested (e.g., by repeating key simulations with a larger lateral cell) or provide justification that the 30 nm cell is sufficient at the highest temperatures studied.

minor comments (5)

Page 3: The phrase 'high bias voltages' is used to motivate Joule heating in GaN devices. A brief quantitative estimate of typical junction temperatures reached under operating conditions would help the reader assess the relevance of the 300–1800 K range studied.
Figure captions (e.g., Fig. 1) reference color scales and variables (r, Rd) that are defined in the caption text but could be more clearly labeled on the figures themselves for quick interpretation.
Page 9: The statement 'hillock formation is a pressure-driven response' is somewhat general. A more quantitative discussion of the pressure magnitudes involved would strengthen the mechanistic argument.
References 8 and 10 appear to be identical (Singh et al., J Mater Sci: Mater Electron 2025, 36(27), 1795). One should be removed.
The abstract states 'electronic energy loss (Se) values' but the main text uses both 'Se' and 'electronic energy loss' interchangeably. Consistent notation throughout would improve readability.

Circularity Check

1 steps flagged · score 2.0 of 10

Minor self-citation load-bearing for foundational mechanisms, but surface hillock morphologies and temperature-dependent results are independently derived.

self citation load bearing [Section describing melt-recrystallization and GaN decomposition (paragraphs around Figs. 1 and 3); references to ref 22]
"The evolution of wurtzite GaN density and the fractions of Ga hexagonal close-packed structure further corroborates this melt-recrystallization mechanism under SHI irradiation. Detailed analyses are available in our previous work22 and Section 2 of the supplementary materials. [...] We have previously elucidated that SHI irradiation decomposes the wurtzite GaN structure into liquid Ga and N2 molecules along the ion track.22"

The paper's foundational claims — that SHI irradiation decomposes wurtzite GaN into liquid Ga and N2, and that melt-recrystallization produces zincblende nanodomains — are supported primarily by self-citation to ref 22 (Liang, He, et al., same author list). These mechanisms underpin the current paper's analysis of Ga-rich hillock composition and zincblende nanodomain distribution. However, the specific surface hillock morphologies (bell-shaped vs. crater-rim), their pressure-driven formation dynamics, and the temperature-dependent dimensional evolution are newly simulated results not directly asserted in the cited work. The self-citation provides background mechanism support but does not constructively force the paper's central surface-damage predictions. This is a minor, non-circular self

full rationale

The paper's central claims — two distinct hillock morphologies depending on Se, their Ga-rich composition, zincblende nanodomain spatial distribution at hillock peripheries, and the temperature-dependent nanochannel formation above 1200 K — are derived from TTM-MD simulations presented in this work. The self-citation to ref 22 (same authors) provides foundational support for the melt-recrystallization mechanism and GaN decomposition into liquid Ga + N2, but these are background mechanisms, not the specific surface-damage predictions claimed here. The hillock formation dynamics (pressure-driven extrusion, sputtering-induced excavation) and the temperature-dependent rheological argument for nanochannel formation are independently derived from the current simulations. No fitted parameter is renamed as a prediction, and no derivation reduces by construction to its inputs. The self-citation is load-bearing for the decomposition mechanism but does not circularly force the paper's conclusions. Score 2 reflects this minor, non-circular self-citation.

Assumptions & free parameters 2 free parameters · 3 assumptions · 0 invented entities

No new entities are postulated. The paper introduces no new particles, forces, or dimensions.

free parameters (2)

Electronic energy loss (Se) values = 18.2 keV/nm (Kr), 40.2 keV/nm (Ta)
Ion species and energies chosen to represent two distinct Se regimes; not fitted to data but selected as representative cases.
Ambient temperatures = 300, 600, 900, 1200, 1500, 1800 K
Temperature grid selected to span operational to extreme conditions; not fitted.

assumptions (3)

domain assumption The TTM-MD framework with the chosen interatomic potential accurately captures thermal spike dynamics, GaN decomposition, and recrystallization in GaN
Invoked throughout the simulation methodology; the entire results depend on this potential correctly modeling the wurtzite-to-liquid-to-recrystallized phase transitions and N2 formation.
domain assumption The melt-recrystallization mechanism and zincblende nanodomain formation established in ref 22 are valid
Referenced in paragraph describing ion track evolution and Figure 3; the paper builds its microstructural analysis on this prior result without independent re-validation.
domain assumption Liquid Ga viscosity and surface tension values from literature (refs 33-34) apply to the transient molten phase in the thermal spike
Invoked in the final paragraph to explain nanochannel formation above 1200 K; the paper extrapolates bulk liquid Ga properties to the extreme non-equilibrium conditions of the thermal spike.

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Cite this review

Pith. "Pith review of Unveiling Nanoscale Surface Damage Dynamics in Swift Heavy Ion Irradiated Gallium Nitride." pith.science (2026). https://pith.science/paper/U3XHGI7V

@misc{pith2026260707092,
  author       = {Pith},
  title        = {Pith review of: Unveiling Nanoscale Surface Damage Dynamics in Swift Heavy Ion Irradiated Gallium Nitride},
  year         = {2026},
  howpublished = {\url{https://pith.science/paper/U3XHGI7V}},
  note         = {Machine review of arXiv:2607.07092}
}

read the original abstract

This work systematically unveils the nanoscale surface damage dynamics in gallium nitride by investigating the atomistic mechanisms of hillock formation. The results identify two distinct hillock morphologies dependent on electronic energy loss (Se) values. Bell-shaped hillocks form under 18.2 keV/nm Kr irradiation, whereas crater-rim hillocks with central holes emerge under 40.2 keV/nm Ta irradiation. Microstructural analysis reveals that Ga-rich hillocks are accompanied by the generation of metastable zincblende nanodomains. These nanodomains preferentially aggregate around the periphery or sidewalls of the hillocks and exhibit a high spatial correlation with screw dislocations. Further temperature-dependent studies indicate that elevated temperatures significantly enlarge the overall dimensions of the hillock structures without altering their fundamental morphologies. Notably, under Ta irradiation above 1200 K, the high temperatures drastically reduce the viscosity and surface tension of liquid gallium. This enhanced fluidity of the transient molten phase promotes the formation of penetrating nanochannels.

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Works this paper leans on

14 extracted references · 14 canonical work pages

[1]

Nonradiative Dynamics Induced by Vacancies in Wide -Gap III -Nitrides: Ab Initio Time-Domain Analysis

(1) Yang, Y.; Shi, Z.; Zhang, S.; Ma, X.; Bai, J.; Fan, D.; Zang, H.; Sun, X.; Li, D. Nonradiative Dynamics Induced by Vacancies in Wide -Gap III -Nitrides: Ab Initio Time-Domain Analysis. J. Phys. Chem. Lett. 2023, 14 (29), 6719–6725. (2) Lee, S.; Alsalman, H.; Jiang, W.; Low, T.; Kwon, Y. -K. Transition Metal -Free Half-Metallicity in Two-Dimensional Ga...

work page 2023
[2]

Femtosecond Ultrafast Dynamics Simulations of Typical Semiconductor Materials under Swift Heavy Ion Irradiation

(4) Liang, J.; He, S.; Liao, W.; Bai, Y.; Li, W.; Shi, T.; Zang, H.; Wei, J.; He, H.; He, C. Femtosecond Ultrafast Dynamics Simulations of Typical Semiconductor Materials under Swift Heavy Ion Irradiation. Journal of Applied Physics 2026, 139 (8), 085701. (5) He, H.; Liu, W.; Zhang, P.; Liao, W.; Tong, D.; Yang, L.; He, C.; Zang, H.; Zong, H. Dynamics Stu...

work page 2026
[3]

P.; Jin, Z

(6) Hu, P. P.; Jin, Z. N.; Xu, L. J.; Zhang, S. X.; Zhai, P. F.; Zeng, J.; Li, Z. Z.; Yan, X. Y.; Cai, L.; Liu, J. Latent Tracks Induced by Swift Heavy Ions in Gallium Nitride. Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms 2025, 568, 165855. 19 (7) Hu, P.-P.; Xu, L.-J.; Zhang, S.-X.; Zhai, P.-F.;...

work page 2025
[4]

K.; Kumar, A

(8) Singh, K.; Verma, M.; Rathi, V.; Kumar, V.; Kanjilal, D.; Brajpuriya, R. K.; Kumar, A. Swift Heavy Ion Irradiation of Gallium Nitride: A Review of Defect Dynamics, Ion–Matter Interactions, and Property Modifications. J Mater Sci: Mater Electron 2025, 36 (27),

work page 2025
[5]

Microstructural Changes in GaN and AlN under 950 MeV Au Swift Heavy Ion Irradiation

(9) Mahfuz, M.; Reza, F.; Liu, X.; Chu, R.; Lang, M.; Snure, M.; Wang, X.; Jin, M. Microstructural Changes in GaN and AlN under 950 MeV Au Swift Heavy Ion Irradiation. Applied Physics Letters 2024, 124 (11), 112104. (10) Singh, K.; Verma, M.; Rathi, V.; Kumar, V.; Kanjilal, D.; Brajpuriya, R. K.; Kumar, A. Swift Heavy Ion Irradiation of Gallium Nitride: A...

work page 2024
[6]

K.; Ban -d’Etat, B.; Lebius, H.; Schleberger, M

(11) Ochedowski, O.; Osmani, O.; Schade, M.; Bussmann, B. K.; Ban -d’Etat, B.; Lebius, H.; Schleberger, M. Graphitic Nanostripes in Silicon Carbide Surfaces Created by Swift Heavy Ion Irradiation. Nat Commun 2014, 5 (1),

work page 2014
[7]

M.; Zhang, C

(12) Zhang, L. M.; Zhang, C. H.; Li, C. X.; Song, Y.; Jin, Y. F.; Wang, T. S. Surface Morphological and Compositional Changes of GaN Films Induced by Swift Heavy-Ion Irradiations. Eur. Phys. J. Appl. Phys. 2012, 59 (3), 30101. 20 (13) Ishikawa, N.; Taguchi, T.; Ogawa, H. Comprehensive Understanding of Hillocks and Ion Tracks in Ceramics Irradiated with Sw...

work page 2012
[8]

S.; Kumar, M

(14) Kumar, V. S.; Kumar, M. S.; Puviarasu, P.; Kumar, J.; Mohanty, T.; Kanjilal, D.; Asokan, K.; Tripathi, A.; Fontana, M.; Camarani, A. Investigations on the 100 MeV Au7+ Ion Irradiation of GaN. Semicond. Sci. Technol. 2007, 22 (5), 511–516. (15) Zhang, L. Q.; Zhang, C. H.; Li, J. J.; Meng, Y. C.; Yang, Y. T.; Song, Y.; Ding, Z. N.; Yan, T. X. Damage to...

work page 2007

Show all 14 references

[9]

C.; Mattei, J

(16) Sequeira, M. C.; Mattei, J. -G.; Vazquez, H.; Djurabekova, F.; Nordlund, K.; Monnet, I.; Mota-Santiago, P.; Kluth, P.; Grygiel, C.; Zhang, S.; Alves, E.; Lorenz, K. Unravelling the Secrets of the Resistance of GaN to Strongly Ionising Radiation. Commun Phys 2021, 4 (1),

2021
[10]

C.; Djurabekova, F.; Nordlund, K.; Mattei, J.; Monnet, I.; Grygiel, C.; Alves, E.; Lorenz, K

(17) Sequeira, M. C.; Djurabekova, F.; Nordlund, K.; Mattei, J.; Monnet, I.; Grygiel, C.; Alves, E.; Lorenz, K. Examining Different Regimes of Ionization‐Induced Damage in GaN Through Atomistic Simulations. Small 2022, 18 (49), 2102235. (18) Chen, K.; Peng, R.; Huang, S.; Wang...

2022
[11]

TCAD Simulation of the Effect of Buffer Layer Parameters on 21 Single Event Burn-Out in p-GaN Gate HEMTs

(19) Zhang, G.; Zhao, S.; Wang, Z.; Song, X.; Liu, S.; Sun, X.; Yu, L.; You, S.; Liu, Z.; Hao, Y.; Zhang, J. TCAD Simulation of the Effect of Buffer Layer Parameters on 21 Single Event Burn-Out in p-GaN Gate HEMTs. IEEE Trans. Electron Devices 2024, 71 (7), 4119–4124. (20) Pal...

2024
[12]

Failure Mechanisms of Enhancement Mode GaN Power HEMTs Operated in Short Circuit

(21) Abbate, C.; Busatto, G.; Sanseverino, A.; Tedesco, D.; Velardi, F. Failure Mechanisms of Enhancement Mode GaN Power HEMTs Operated in Short Circuit. Microelectronics Reliability 2019, 100–101, 113454. (22) Liang, J.; He, S.; Liao, W.; Shi, T.; Zang, H.; Li, Y.; Fu, X.; Ya...

2019
[13]

Nano Hillock and Complex Crater Formation by Low-Energy Proton Implantation with Incident Angle into Lithium Niobate Single Crystal

(24) Kumar, P.; Moorthy Babu, S. Nano Hillock and Complex Crater Formation by Low-Energy Proton Implantation with Incident Angle into Lithium Niobate Single Crystal. Radiation Effects and Defects in Solids 2011, 166 (4), 258–264. (25) Waseda, Y.; Suzuki, K. Structure Factor an...

2011
[14]

H.; Wang, X

(33) Xiong, L. H.; Wang, X. D.; Yu, Q.; Zhang, H.; Zhang, F.; Sun, Y.; Cao, Q. P.; Xie, H. L.; Xiao, T. Q.; Zhang, D. X.; Wang, C. Z.; Ho, K. M.; Ren, Y.; Jiang, J. Z. Temperature-Dependent Structure Evolution in Liquid Gallium. Acta Materialia 2017, 128, 304–312. (34) Balyaki...

2017

Pith tools

Reviewed July 9, 2026 · model on record in the stance chip above.

[1] [1]

Nonradiative Dynamics Induced by Vacancies in Wide -Gap III -Nitrides: Ab Initio Time-Domain Analysis

(1) Yang, Y.; Shi, Z.; Zhang, S.; Ma, X.; Bai, J.; Fan, D.; Zang, H.; Sun, X.; Li, D. Nonradiative Dynamics Induced by Vacancies in Wide -Gap III -Nitrides: Ab Initio Time-Domain Analysis. J. Phys. Chem. Lett. 2023, 14 (29), 6719–6725. (2) Lee, S.; Alsalman, H.; Jiang, W.; Low, T.; Kwon, Y. -K. Transition Metal -Free Half-Metallicity in Two-Dimensional Ga...

work page 2023

[2] [2]

Femtosecond Ultrafast Dynamics Simulations of Typical Semiconductor Materials under Swift Heavy Ion Irradiation

(4) Liang, J.; He, S.; Liao, W.; Bai, Y.; Li, W.; Shi, T.; Zang, H.; Wei, J.; He, H.; He, C. Femtosecond Ultrafast Dynamics Simulations of Typical Semiconductor Materials under Swift Heavy Ion Irradiation. Journal of Applied Physics 2026, 139 (8), 085701. (5) He, H.; Liu, W.; Zhang, P.; Liao, W.; Tong, D.; Yang, L.; He, C.; Zang, H.; Zong, H. Dynamics Stu...

work page 2026

[3] [3]

P.; Jin, Z

(6) Hu, P. P.; Jin, Z. N.; Xu, L. J.; Zhang, S. X.; Zhai, P. F.; Zeng, J.; Li, Z. Z.; Yan, X. Y.; Cai, L.; Liu, J. Latent Tracks Induced by Swift Heavy Ions in Gallium Nitride. Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms 2025, 568, 165855. 19 (7) Hu, P.-P.; Xu, L.-J.; Zhang, S.-X.; Zhai, P.-F.;...

work page 2025

[4] [4]

K.; Kumar, A

(8) Singh, K.; Verma, M.; Rathi, V.; Kumar, V.; Kanjilal, D.; Brajpuriya, R. K.; Kumar, A. Swift Heavy Ion Irradiation of Gallium Nitride: A Review of Defect Dynamics, Ion–Matter Interactions, and Property Modifications. J Mater Sci: Mater Electron 2025, 36 (27),

work page 2025

[5] [5]

Microstructural Changes in GaN and AlN under 950 MeV Au Swift Heavy Ion Irradiation

(9) Mahfuz, M.; Reza, F.; Liu, X.; Chu, R.; Lang, M.; Snure, M.; Wang, X.; Jin, M. Microstructural Changes in GaN and AlN under 950 MeV Au Swift Heavy Ion Irradiation. Applied Physics Letters 2024, 124 (11), 112104. (10) Singh, K.; Verma, M.; Rathi, V.; Kumar, V.; Kanjilal, D.; Brajpuriya, R. K.; Kumar, A. Swift Heavy Ion Irradiation of Gallium Nitride: A...

work page 2024

[6] [6]

K.; Ban -d’Etat, B.; Lebius, H.; Schleberger, M

(11) Ochedowski, O.; Osmani, O.; Schade, M.; Bussmann, B. K.; Ban -d’Etat, B.; Lebius, H.; Schleberger, M. Graphitic Nanostripes in Silicon Carbide Surfaces Created by Swift Heavy Ion Irradiation. Nat Commun 2014, 5 (1),

work page 2014

[7] [7]

M.; Zhang, C

(12) Zhang, L. M.; Zhang, C. H.; Li, C. X.; Song, Y.; Jin, Y. F.; Wang, T. S. Surface Morphological and Compositional Changes of GaN Films Induced by Swift Heavy-Ion Irradiations. Eur. Phys. J. Appl. Phys. 2012, 59 (3), 30101. 20 (13) Ishikawa, N.; Taguchi, T.; Ogawa, H. Comprehensive Understanding of Hillocks and Ion Tracks in Ceramics Irradiated with Sw...

work page 2012

[8] [8]

S.; Kumar, M

(14) Kumar, V. S.; Kumar, M. S.; Puviarasu, P.; Kumar, J.; Mohanty, T.; Kanjilal, D.; Asokan, K.; Tripathi, A.; Fontana, M.; Camarani, A. Investigations on the 100 MeV Au7+ Ion Irradiation of GaN. Semicond. Sci. Technol. 2007, 22 (5), 511–516. (15) Zhang, L. Q.; Zhang, C. H.; Li, J. J.; Meng, Y. C.; Yang, Y. T.; Song, Y.; Ding, Z. N.; Yan, T. X. Damage to...

work page 2007