Reversing the crystal-field splitting of wurtzite GaN by 2% biaxial strain is predicted to lift the split-off hole band above the light and heavy holes and raise the hole Hall mobility by 230%.
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Route to high hole mobility in GaN via reversal of crystal-field splitting
Reversing the crystal-field splitting of wurtzite GaN by 2% biaxial strain is predicted to lift the split-off hole band above the light and heavy holes and raise the hole Hall mobility by 230%.