In FIB-fabricated NbGe2 devices, diode efficiency stays below 2% in the type-I bulk regime and rises to about 50% in the type-II surface regime, tracking the vortex creep rate.
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Absence of diode effect in chiral type-I superconductor NbGe2
In FIB-fabricated NbGe2 devices, diode efficiency stays below 2% in the type-I bulk regime and rises to about 50% in the type-II surface regime, tracking the vortex creep rate.