Pith. sign in

REVIEW 3 major objections 5 minor 63 references

Absence of diode effect in chiral type-I superconductor NbGe2

T0 review · 3 major / 5 minor · reviewed 2026-08-10 · deepseek-v4-flash

Challenge this review Re-run · record.json Download PDF Read on arXiv ↗ Review JSON

Pith's one-line read The superconducting diode effect in NbGe2 is controlled by vortex dynamics: diode efficiency stays below 2% in the vortex-free type-I regime and jumps to about 50% when vortex creep activates above 40 mT.

desk verdict A clean, honest experiment showing SDE absence tracks the type-I regime and emergence tracks vortex creep; the correlation is real, the causal wording is a bit strong. read the letter →

arxiv 2501.09226 v1 pith:JO5MB5KN submitted 2025-01-16 cond-mat.supr-con cond-mat.mes-hall

Dong Li , Zouyouwei Lu , Wenxin Cheng , Xiaofan Shi , Lihong Hu , Xiaoping Ma , Yue Liu , Yuki M. Itahashi
show 16 more authors
Takashi Shitaokoshi Peiling Li Hua Zhang Ziyi Liu Fanming Qu Jie Shen Qihong Chen Kui Jin Jinguang Cheng Jens Hänisch Huaixin Yang Guangtong Liu Li Lu Xiaoli Dong Yoshihiro Iwasa Jiangping Hu
This is my paper · ORCID
classification cond-mat.supr-concond-mat.mes-hall
keywords superconductingdiodeeffectchiralsuperconductortype-IsuperconductivityNbGe2vortexdynamicsnonreciprocaltransportfocusedionbeamBKTtransition
verification ladder T0 review T1 audit T2 compute T3 formal

The pith

A machine-rendered reading of the paper's core claim, the machinery that carries it, and where it could break.

The reading

This paper tries to settle a disputed question about the superconducting diode effect (SDE): is the asymmetry in critical current an intrinsic property of the superconductor, or does it come from vortices? Using the chiral type-I superconductor NbGe2, the authors show that even with both space-inversion and time-reversal symmetry broken, the diode efficiency stays below 2% at low fields, where vortices are absent. Above 40 mT, when the type-I bulk is suppressed and an artificially induced type-II NbGe surface takes over, vortex creep switches on and the diode efficiency jumps to about 50%. The authors conclude that vortex dynamics is a critical, not optional, ingredient for a significant SDE, beyond the established symmetry rules.

What carries the argument

The argument is carried by two measured quantities: the diode efficiency Q = |Ic+ - Ic-| / ((Ic+ + Ic-) / 2), which quantifies the difference between positive and negative critical currents, and the vortex creep rate S = 1/(N-1), extracted from the power-law exponent N of the current-voltage curves near Ic. The physical switch between the two regimes is the FIB-induced amorphous NbGe surface layer: it is type-II superconducting with Tc ≈ 2.95 K, so vortices can move in it, while the type-I NbGe2 bulk (Tc ≈ 2 K) is vortex-free until its superconductivity is suppressed by field. The matching field dependence of Q and S, with both jumping at about 40 mT, is the evidence that vortex dynamics controls the SDE.

What would settle it

Strip or electrically bypass the amorphous NbGe surface in an otherwise identical NbGe2 device and remeasure Q(B): if the diode efficiency still stays below 2% up to the bulk upper critical field, the vortex-dynamics explanation is supported; if a significant Q appears while no vortices are present, the central claim fails.

Watch

Extended reading notes

Core claim

The central claim is that the superconducting diode effect requires more than broken symmetries: in NbGe2, a chiral type-I superconductor in which space-inversion and time-reversal symmetries are both broken, the diode efficiency Q stays below 2% at low magnetic fields. The effect appears only above the bulk upper critical field of about 40 mT, where superconductivity is carried by the FIB-induced amorphous NbGe surface, a type-II superconductor with a higher critical temperature; at that same field the vortex creep rate S rises abruptly. The paper therefore concludes that vortex dynamics is the decisive ingredient that turns the symmetry-allowed nonreciprocity into a real diode effect.

Load-bearing premise

The interpretation assumes that, below 40 mT, the measured critical current flows through the type-I NbGe2 bulk rather than through the amorphous NbGe surface; that assumption rests on an estimate that the bulk depairing current (66 mA) exceeds the surface value (0.35 mA) using assumed penetration depths, coherence lengths, and cross-sectional areas.

Editorial extensions

If this is right

  • In a superconductor where vortices cannot move, the diode effect should remain negligible even when all symmetry requirements are met.
  • The field at which a diode effect appears should coincide with the onset of vortex creep, not just with the symmetry-breaking conditions.
  • Focused-ion-beam surfaces can turn a type-I or non-superconducting material into a diode-active device, extending SDE functionality to materials that do not naturally host it.
  • Diode polarity switched by reversing the magnetic field, observed in the vortex-active regime, supports asymmetric vortex pinning as the rectification mechanism in this device.

Reading between the lines

Editorial extensions of the paper, not claims the author makes directly.

  • If vortex dynamics is the controlling factor, then many reported SDEs in thin films and interfaces may be dominated by vortex depinning rather than by intrinsic finite-momentum pairing; the paper urges caution, and this is the natural generalization.
  • A quantitative prediction follows that the paper does not state: in the vortex-active regime, Q should scale with the creep rate S as temperature, field, or pinning strength is varied, so the two should never decouple.
  • The same FIB 'surface toggle' could be used as a controlled experiment in other materials: comparing identical devices with and without the amorphous layer would isolate the vortex contribution from the intrinsic symmetry contribution.
  • If this is right, strengthening vortex pinning (for example by irradiation or nanostructuring) should suppress the diode effect even though symmetry breaking remains, a testable design rule for practical superconducting diodes.
Share X Bluesky LinkedIn Reddit HN

Signed reviews

No signed human review yet.

Editorial analysis

A structured set of objections, weighed in public.

Desk editor's note, referee report, and a circularity audit.

Referee Report

3 major / 5 minor

Summary. The manuscript reports transport measurements on FIB-fabricated microdevices of the chiral type-I superconductor NbGe2, in which focused-ion-beam milling creates a 10–15 nm amorphous NbGe surface layer with higher Tc and type-II behavior. Below about 40 mT, where the NbGe2 bulk is superconducting and vortex dynamics are suppressed, the diode efficiency Q is below 2%; above 40 mT, Q rises to about 50% and coincides with an abrupt increase in the vortex creep rate S extracted from I–V curves. The authors interpret these observations as evidence that vortex dynamics, rather than intrinsic Cooper-pair asymmetry alone, are critical for the superconducting diode effect, and that type-I superconductivity with strongly suppressed vortices does not produce a diode effect.

Significance. If correct, this is an important empirical constraint on SDE mechanisms: it separates a vortex-free type-I regime from a vortex-dominated type-II regime in the same device and shows that the diode effect appears only when vortex dynamics are activated. The paper's strengths include multi-device reproducibility (devices D1–D3), direct structural characterization of the amorphous layer by STEM/EELS, BKT analysis of the 2D surface superconductivity, and explicit acknowledgment of a similar concurrent study. The main caveat is that the central mechanistic separation relies on an auxiliary theoretical estimate of the critical-current distribution between the bulk and surface layers.

major comments (3)
  1. [Supplementary Note 6 and main text, 'Absence of SDE in type-I NbGe2 regime'] The claim that the low-field Ic and hence the negligible Q are properties of the chiral type-I NbGe2 bulk depends entirely on the estimate in Supplementary Note 6 that the bulk self-field depairing current (66 mA) far exceeds the surface value (0.35 mA). This estimate assumes values of lambda and xi for both layers and effective cross-sectional areas (0.25 x 5 um^2 for the bulk and 0.03 x 5 um^2 for the surface) that are not directly measured in the actual devices. If the low-field critical current is carried instead by the amorphous surface, by the FIB-damaged interface, or by a parallel path, then the Q<2% data would not establish the absence of SDE in type-I NbGe2, and the Q(B)-S(B) correlation would lose its mechanistic interpretation. The authors should provide direct evidence for the current path (for example, comparison of measured Ic with the two estimates, thickness-dependent or temperature-dependent tests, or a control device with the surface layer removed) or explicitly reframe the conclusion as conditional on this assumption.
  2. [Section 'Nonreciprocal transport near Tc' and Fig. 5e; S = 1/(N-1)] The central correlation between Q(B) and S(B) is empirically visible, but the claim of an 'abrupt increase' in S at exactly the same 40 mT threshold is identified post hoc and the plotted S values carry no error bars or fit-quality information. Because N is extracted from power-law fits V proportional to I^N near Ic, the uncertainty in N propagates strongly into S = 1/(N-1) (for example, N = 87 versus N = 5 in Figs. 5c-d), and the slope change in Fig. 5e should be quantified with confidence intervals or alternative threshold criteria to support the coincidence with Hc2 of NbGe2. Without this, the quantitative statement that S and Q switch at the same field is weaker than the text suggests.
  3. [Conclusions and Note added] The manuscript's concluding lesson, that 'the ubiquitous vortex effect plays a nonnegligible and even critical role in realizing the SDE,' goes beyond the data unless the regime assignment is validated. The note added (reference [53]) mentions a similar concurrent study on FIB-fabricated NbGe2, but the relationship between that study and the present conclusions is not discussed; this is relevant because the concurrent study could either support or challenge the present interpretation, and its existence strengthens the need for a robust current-path assignment.
minor comments (5)
  1. [Conclusions] The sentence 'Although we did not observe observe the SDE in chiral NbGe2' contains a duplicated word; please revise.
  2. [Section 'Nonreciprocal transport near Tc'] The phrase 'two-fold rotational symmetry (2001)' appears to be a typographical error for a screw-axis or rotation-axis notation; please correct the symmetry symbol.
  3. [Fig. 5a caption] The caption statement that 'Ic maximum is calculated from the self-field Ic, and the empirical evolution is capped at the measured upper critical field Hc2' is unclear; please specify the model used for the field dependence of Ic.
  4. [Fig. 5 caption] The voltage criterion of 1 microvolt used to extract Ic is stated only in the Figure 5 caption; please define the criterion and the fitting range in the Methods section.
  5. [Section 'Nonreciprocal transport near Tc'] The relation S ~ 1/(N-1) is introduced without derivation or a reference to the creep model; a brief justification would improve readability and help the reader assess the uncertainty in S.

Circularity Check

0 steps flagged · score 0.0 of 10

No significant circularity found; the central claims are empirical and the auxiliary critical-current estimate is not the target result.

full rationale

The paper’s main result—negligible diode efficiency Q < 2% below about 40 mT and Q rising to about 50% at higher fields, with an abrupt change in vortex creep rate S at the same field—is an experimental correlation extracted from measured I-V curves. Q and S are obtained from the same transport data but are not defined in terms of one another, so the Q(B)-versus-S(B) similarity is not forced by construction. The low-field regime is assigned to the NbGe2 bulk using the independent self-field critical-current estimate in Supplementary Note 6, which is based on measured Hc and Hc2 values, literature parameters for amorphous NbGe, and the external Talantsev-Tallon formula. That estimate is an auxiliary assumption rather than the derived conclusion, so even its potential fragility does not make the argument circular. The paper’s self-citations (for example, the coupled electron-phonon liquid in Ref. [21] and the general superconducting diode theory in Ref. [10]) are not load-bearing for the central vortex-dynamics claim; the type-I nature of NbGe2 is supported by external prior work, the FIB-induced NbGe surface is characterized by STEM, EELS, BKT fitting, and Hc2 comparisons, and the SDE measurements are presented as direct observations. No step in the derivation chain reduces by definition to its own inputs, and no fitted parameter is renamed as a prediction. Therefore the appropriate circularity score is 0.

Assumptions & free parameters 4 free parameters · 5 assumptions · 0 invented entities

The central empirical claims depend mainly on the regime assignment and on the vortex-creep proxy. The regime assignment uses a theoretical Ic estimate with several assumed parameters; the creep rate uses a fitted exponent. These assumptions are not circular, but they should be tested by direct measurement of which layer carries the supercurrent.

free parameters (4)
  • Bulk NbGe2 lambda and xi values = lambda ~ 125 nm, xi ~ 93 nm
    Deduced from measured Hc ~ 20 mT and Hc2 ~ 38 mT in Supplementary Note 6; used to estimate Jc(sf) for NbGe2 and to argue the bulk carries the low-field current.
  • Amorphous NbGe penetration depth = lambda ~ 620 nm
    Taken from ref [59] for amorphous NbGe; enters the estimated Jc(sf) for the surface layer in Supplementary Note 6.
  • Assumed cross-section areas for Ic estimate = 0.25 x 5 um2 for NbGe2, 0.03 x 5 um2 for NbGe
    Chosen in Supplementary Note 6; these determine the theoretical ratio 66 mA versus 0.35 mA that underpins the regime assignment.
  • Vortex creep exponent N = N = 87 at 20 mT, N = 5 at 100 mT
    N is fitted to V proportional to I^N and then converted to S = 1/(N-1); this is a data fit used to establish the field dependence of S.
assumptions (5)
  • domain assumption NbGe2 bulk is a type-I superconductor below Hc.
    Based on previous refs [18,20,28] and own magnetization; this is the premise for treating the low-field regime as vortex-free.
  • domain assumption FIB-induced amorphous NbGe layer is a separate type-II superconductor with higher Tc and Hc2.
    Supported by STEM/EELS and BKT fits; the entire high-field regime interpretation rests on this.
  • ad hoc to paper The low-field critical current is dominated by the NbGe2 bulk.
    Derived from theoretical Ic estimate in Supplementary Note 6 with assumed lambda, xi, and cross-sections; not directly measured.
  • domain assumption Vortex creep rate S is approximated by 1/(N-1) from V proportional to I^N.
    Standard flux-creep relation from ref [48]; used to link S to the I-V fits.
  • domain assumption BKT transition theory describes the NbGe surface superconductivity.
    Used to identify 2D superconductivity and vortex-antivortex unbinding; fits are consistent but the theory is assumed.

how reviews work

0 comments
Cite this review

Pith. "Pith review of Absence of diode effect in chiral type-I superconductor NbGe2." pith.science (2026). https://pith.science/paper/JO5MB5KN

@misc{pith2026250109226,
  author       = {Pith},
  title        = {Pith review of: Absence of diode effect in chiral type-I superconductor NbGe2},
  year         = {2026},
  howpublished = {\url{https://pith.science/paper/JO5MB5KN}},
  note         = {Machine review of arXiv:2501.09226}
}
read the original abstract

Symmetry elegantly governs the fundamental properties and derived functionalities of condensed matter. For instance, realizing the superconducting diode effect (SDE) demands breaking space-inversion and time-reversal symmetries simultaneously. Although the SDE is widely observed in various platforms, its underlying mechanism remains debated, particularly regarding the role of vortices. Here, we systematically investigate the nonreciprocal transport in the chiral type-I superconductor NbGe2. Moreover, we induce type-II superconductivity with elevated superconducting critical temperature on the artificial surface by focused ion beam irradiation, enabling control over vortex dynamics in NbGe2 devices. Strikingly, we observe negligible diode efficiency (Q < 2%) at low magnetic fields, which rises significantly to Q ~ 50% at high magnetic fields, coinciding with an abrupt increase in vortex creep rate when the superconductivity of NbGe2 bulk is suppressed. These results unambiguously highlight the critical role of vortex dynamics in the SDE, in addition to the established symmetry rules.

Figures

Figures reproduced from arXiv: 2501.09226 by the authors.

Figure 1
Figure 1. Type-I superconductor NbGe2. a, The chiral crystal structure of NbGe2. The right-handed and left-handed Ge-Ge bond enantiomers are highlighted by blue and red lines, respectively. b, The temperature dependent resistivity of a NbGe2 crystal up to 300 K. The residual resistivity ratio RRR = R300 K/R5 K = 96. The inset shows a two-terminal resistance under different magnetic fields, in which the superconducting critica… view at source ↗
Figure 2
Figure 2. Chirality induced nonreciprocal transport in the normal state of NbGe2. a, Scanning electron microscope image of NbGe2 device D3. The NbGe2 microstructures and electrodes are highlighted in purple and yellow colors, respectively. b, The temperature dependent resistivity of NbGe2 devices D1-D3. The purple c-axis transport was obtained from D3. The residual resistivity ratio RRR is calculated from R300 K/R5 K. c and d… view at source ↗
Figure 3
Figure 3. Surficial type-II superconductivity in NbGe2 devices. a, Schematic illustration of NbGe2 device in the transport measurements. The crystalline NbGe2 core is covered by a thin amorphous NbGe shield, which induces the excitations of vortex-antivortex pairs. b, High-angle annular dark field (HAADF) image of focused-ion-beam irradiated NbGe2. The corresponding fast Fourier transform (FFT) images of the amorphous region … view at source ↗

Discussion (0). Continue with ORCID to comment.

Reference graph

Works this paper leans on

63 extracted references · 63 canonical work pages

  1. [53]

    K. Momma&F. Izumi, VESTA 3 for three-dimensional visualization of crystal, volumetric and morphology data, J. Appl. Crystallogr. 44, 1272, (2011)

    work page 2011

  2. [1]

    Tokura&N

    Y . Tokura&N. Nagaosa, Nonreciprocal responses from non -centrosymmetric quantum materials, Nat Commun 9, 3740, (2018)

    work page 2018

  3. [2]

    T. Ideue&Y . Iwasa, Symmetry Breaking and Nonlinear Electric Transport in van der Waals Nanostructures, Annu. Rev. Condens. Matter Phys. 12, 201, (2021)

    work page 2021

  4. [3]

    Nagaosa&Y

    N. Nagaosa&Y . Yanase, Nonreciprocal Transport and Optical Phenomena in Quantum Materials, Annu. Rev. Condens. Matter Phys. 15, 63, (2024)

    work page 2024

  5. [4]

    Ando et al., Observation of superconducting diode effect, Nature 584, 373, (2020)

    F. Ando et al., Observation of superconducting diode effect, Nature 584, 373, (2020)

    work page 2020

  6. [5]

    J. J. He, Y . Tanaka, &N. J. N. J. o. P. Nagaosa, A phenomenological theory of superconductor diodes, New J. Phys. 24, 053014, (2022)

    work page 2022

  7. [6]

    Nadeem, M

    M. Nadeem, M. S. Fuhrer, &X. Wang, The superconducting diode effect, Nat. Rev. Phys. 5, 558, (2023)

    work page 2023

  8. [7]

    P. J. W. Moll&V . B. Geshkenbein, Evolution of superconducting diodes, Nat. Phys. 19, 1379, (2023)

    work page 2023

Show all 63 references
  1. [8]

    Daido, Y

    A. Daido, Y . Ikeda, &Y . Yanase, Intrinsic Superconducting Diode Effect, Phys Rev Lett 128, 037001, (2022)

    2022

  2. [9]

    N. F. Q. Yuan&L. Fu, Supercurrent diode effect and finite -momentum superconductors, Proc Natl Acad Sci U S A 119, e2119548119, (2022)

    2022

  3. [10]

    K. Jiang&J. Hu, Superconducting diode effects, Nat. Phys. 18, 1145, (2022)

    2022

  4. [11]

    S. Ilic&F. S. Bergeret, Theory of the Supercurrent Diode Effect in Rashba Superconductors with Arbitrary Disorder, Phys Rev Lett 128, 177001, (2022)

    2022

  5. [12]

    W. K. Kwok et al., V ortices in high-performance high-temperature superconductors, Rep. Prog. Phys. 79, 116501, (2016)

    2016

  6. [13]

    Hou et al., Ubiquitous Superconducting Diode Effect in Superconductor Thin Films, Phys Rev Lett 131, 027001, (2023)

    Y . Hou et al., Ubiquitous Superconducting Diode Effect in Superconductor Thin Films, Phys Rev Lett 131, 027001, (2023)

    2023

  7. [14]

    Gutfreund et al., Direct observation of a superconducting vortex diode, Nat Commun 14, 1630, (2023)

    A. Gutfreund et al., Direct observation of a superconducting vortex diode, Nat Commun 14, 1630, (2023)

    2023

  8. [15]

    Y . Y . Lyu et al., Superconducting diode effect via conformal-mapped nanoholes, Nat Commun 12, 2703, (2021)

    2021

  9. [16]

    Tinkham, Introduction to superconductivity (Courier Corporation, 2004), Vol

    M. Tinkham, Introduction to superconductivity (Courier Corporation, 2004), Vol. 1

    2004

  10. [17]

    Amon et al., Noncentrosymmetric superconductor BeAu, Phys

    A. Amon et al., Noncentrosymmetric superconductor BeAu, Phys. Rev. B 97, 014501, (2018)

    2018

  11. [18]

    Lv et al., Type-I superconductivity in noncentrosymmetric NbGe2, Phys

    B. Lv et al., Type-I superconductivity in noncentrosymmetric NbGe2, Phys. Rev. B 102, 064507, (2020)

    2020

  12. [19]

    Chang et al., Topological quantum properties of chiral crystals, Nat Mater 17, 978, (2018)

    G. Chang et al., Topological quantum properties of chiral crystals, Nat Mater 17, 978, (2018)

    2018

  13. [20]

    Emmanouilidou et al., Fermiology and type-I superconductivity in the chiral superconductor NbGe2 with Kramers- Weyl fermions, Phys

    E. Emmanouilidou et al., Fermiology and type-I superconductivity in the chiral superconductor NbGe2 with Kramers- Weyl fermions, Phys. Rev. B 102, 235144 (2020)

    2020

  14. [22]

    Ideue et al., Bulk rectification effect in a polar semiconductor, Nat

    T. Ideue et al., Bulk rectification effect in a polar semiconductor, Nat. Phys. 13, 578, (2017)

    2017

  15. [23]

    Wang et al., Gigantic Magnetochiral Anisotropy in the Topological Semimetal ZrTe5, Phys Rev Lett 128, 176602, (2022)

    Y . Wang et al., Gigantic Magnetochiral Anisotropy in the Topological Semimetal ZrTe5, Phys Rev Lett 128, 176602, (2022)

    2022

  16. [24]

    P. J. W. Moll, Focused Ion Beam Microstructuring of Quantum Matter, Annu. Rev. Condens. Matter Phys. 9, 147, (2018)

    2018

  17. [25]

    Remeika, A

    J. Remeika, A. Cooper, Z. Fisk, &D. Johnston, Superconductivity of single-crystal NbGe2, J. Less-Common Met. 62, 211, (1978)

    1978

  18. [26]

    Y . J. Sato et al. , Fermi surface topology and electronic transport properties of chiral crystal NbGe2 with strong electron-phonon interaction, Phys. Rev. B 108, (2023)

    2023

  19. [27]

    Yao et al., Observation of Chiral Surface State in Superconducting NbGe2, arXiv: 2403.03324, (2024)

    M. Yao et al., Observation of Chiral Surface State in Superconducting NbGe2, arXiv: 2403.03324, (2024)

    2024 arXiv

  20. [28]

    Zhang et al

    D. Zhang et al. , Full superconducting gap and type -I to type -II superconductivity transition in single crystalline NbGe2, Phys. Rev. B 103, 214508 (2021). 12

    2021

  21. [29]

    Kimura et al., Type II/1 Superconductivity with Extremely High Hc3 in Noncentrosymmetric LaRhSi3, J

    N. Kimura et al., Type II/1 Superconductivity with Extremely High Hc3 in Noncentrosymmetric LaRhSi3, J. Phys. Soc. Jpn. 85, (2016)

    2016

  22. [30]

    Xu et al., Extended Kohler’s Rule of Magnetoresistance, Phys

    J. Xu et al., Extended Kohler’s Rule of Magnetoresistance, Phys. Rev. X 11, 041029, (2021)

    2021

  23. [31]

    G. L. Rikken, J. Folling, &P. Wyder, Electrical magnetochiral anisotropy, Phys Rev Lett 87, 236602, (2001)

    2001

  24. [32]

    Wakatsuki et al., Nonreciprocal charge transport in noncentrosymmetric superconductors, Sci

    R. Wakatsuki et al., Nonreciprocal charge transport in noncentrosymmetric superconductors, Sci. Adv. 3, e1602390, (2017)

    2017

  25. [33]

    F. Pop, P. Auban-Senzier, E. Canadell, G. L. Rikken, &N. Avarvari, Electrical magnetochiral anisotropy in a bulk chiral molecular conductor, Nat Commun 5, 3757, (2014)

    2014

  26. [34]

    B. I. Halperin&D. R. Nelson, RESISTIVE TRANSITION IN SUPERCONDUCTING FILMS, J. Low Temp. Phys. 36, 599, (1979)

    1979

  27. [37]

    Li et al., Quasi-Two-Dimensional Nature of High-Tc Superconductivity in Iron-Based (Li,Fe)OHFeSe, Chin

    D. Li et al., Quasi-Two-Dimensional Nature of High-Tc Superconductivity in Iron-Based (Li,Fe)OHFeSe, Chin. Phys. Lett. 39, 127402, (2022)

    2022

  28. [38]

    Saito, T

    Y . Saito, T. Nojima, &Y . Iwasa, Highly crystalline 2D superconductors, Nat. Rev. Mater. 2, 16094, (2016)

    2016

  29. [39]

    G. L. Rikken&P. Wyder, Magnetoelectric anisotropy in diffusive transport, Phys Rev Lett 94, 016601, (2005)

    2005

  30. [40]

    Y . M. Itahashi et al., Nonreciprocal transport in gate -induced polar superconductor SrTiO3, Sci. Adv. 6, eaay9120 (2020)

    2020

  31. [41]

    Hoshino, R

    S. Hoshino, R. Wakatsuki, K. Hamamoto, &N. Nagaosa, Nonreciprocal charge transport in two -dimensional noncentrosymmetric superconductors, Phys. Rev. B 98, 054510, (2018)

    2018

  32. [42]

    Yasuda et al., Nonreciprocal charge transport at topological insulator/superconductor interface, Nat Commun 10, 2734, (2019)

    K. Yasuda et al., Nonreciprocal charge transport at topological insulator/superconductor interface, Nat Commun 10, 2734, (2019)

    2019

  33. [43]

    Zhang et al., Nonreciprocal superconducting NbSe2 antenna, Nat

    E. Zhang et al., Nonreciprocal superconducting NbSe2 antenna, Nat. Commun. 11, 5634, (2020)

    2020

  34. [44]

    Y . M. Itahashi et al., Giant second harmonic transport under time-reversal symmetry in a trigonal superconductor, Nat Commun 13, 1659, (2022)

    2022

  35. [45]

    Narita et al

    H. Narita et al. , Field -free superconducting diode effect in noncentrosymmetric superconductor/ferromagnet multilayers, Nat Nanotechnol 17, 823, (2022)

    2022

  36. [46]

    Bauriedl et al., Supercurrent diode effect and magnetochiral anisotropy in few -layer NbSe(2), Nat Commun 13, 4266, (2022)

    L. Bauriedl et al., Supercurrent diode effect and magnetochiral anisotropy in few -layer NbSe(2), Nat Commun 13, 4266, (2022)

    2022

  37. [47]

    Liu et al., Superconducting diode effect under time-reversal symmetry, Sci

    F. Liu et al., Superconducting diode effect under time-reversal symmetry, Sci. Adv. 10, eado1502, (2024)

    2024

  38. [48]

    Hänisch et al., Anisotropy of flux pinning properties in superconducting (Li,Fe)OHFeSe thin films, Supercond

    J. Hänisch et al., Anisotropy of flux pinning properties in superconducting (Li,Fe)OHFeSe thin films, Supercond. Sci. Technol. 33, 114009, (2020)

    2020

  39. [49]

    Pal et al., Josephson diode effect from Cooper pair momentum in a topological semimetal, Nat Phys 18, 1228, (2022)

    B. Pal et al., Josephson diode effect from Cooper pair momentum in a topological semimetal, Nat Phys 18, 1228, (2022)

    2022

  40. [50]

    From the perspective of electronic applications, we have confirmed that artificial superconducting surfaces can host the SDE

    or Little–Parks oscillations [51], are necessary and promising to support the existence of exotic superconductivity in these platforms. From the perspective of electronic applications, we have confirmed that artificial superconducting surfaces can host the SDE. This functional...

  41. [51]

    Le et al., Superconducting diode effect and interference patterns in kagome CsV(3)Sb(5), Nature 630, 64, (2024)

    T. Le et al., Superconducting diode effect and interference patterns in kagome CsV(3)Sb(5), Nature 630, 64, (2024)

    2024

  42. [52]

    Wan et al

    Z. Wan et al. , Unconventional superconductivity in chiral molecule -TaS(2) hybrid superlattices, Nature 632, 69, (2024)

    2024

  43. [54]

    Bai et al., Negative magnetoresistance component and supercurrent diode effect in microstructured NbGe2 chiral crystals, Phys

    Z. Bai et al., Negative magnetoresistance component and supercurrent diode effect in microstructured NbGe2 chiral crystals, Phys. Rev. B 110, 214507, (2024)

    2024

  44. [55]

    P. J. W. Moll, P. Kushwaha, N. Nandi, B. Schmidt, &A. P. Mackenzie, Evidence for hydrodynamic electron flow in 13 PdCoO2, Science 351, 1061, (2016)

    2016

  45. [60]

    Kokubo, T

    N. Kokubo, T. Yoshimura, &B. Shinozaki, Flow and Tilt -Induced Orientation of the Moving V ortex Lattice in Amorphous NbGe Superconducting Thin Films, J. Phys. Soc. Jpn. 82, (2013). 14 Fig. 1. Type-I superconductor NbGe2. a, The chiral crystal structure of NbGe2. The right-han...

    2013

  46. [61]

    Due to the ultralow residual resistivity, NbGe2 emerges as a promising candidate material for studying electron hydrodynamics

    and graphene [55], opening a new area of investigation. Due to the ultralow residual resistivity, NbGe2 emerges as a promising candidate material for studying electron hydrodynamics. Supplementary Fig. 1 shows evidence of a coupled electron-phonon liquid in NbGe2. To enhance t...

  47. [62]

    P. J. W. Moll, P. Kushwaha, N. Nandi, B. Schmidt, &A. P. Mackenzie, Evidence for hydrodynamic electron flow in PdCoO2, Science 351, 1061, (2016)

    2016

  48. [63]

    D. A. Bandurin et al., Negative local resistance caused by viscous electron backflow in graphene, Science 351, 1055, (2016)

    2016

  49. [64]

    H. Y . Yang et al., Evidence of a coupled electron-phonon liquid in NbGe(2), Nat Commun 12, 5292, (2021)

    2021

  50. [65]

    M. D. Bachmann et al., Inducing superconductivity in Weyl semimetal microstructures by selective ion sputtering, Sci. Adv. 3, e1602983, (2017)

    2017

  51. [66]

    P. H. Kes, M. H. Theunissen, &B. Becker, Properties of the vortex liquid in the classical and quantum regime, Physica C 282, 331, (1997)

    1997

  52. [67]

    C. A. V olkert&A. M. Minor, Focused Ion Beam Microscopy and Micromachining, MRS Bull. 32, 389, (2007)

    2007

  53. [68]

    Berghuis&P

    P. Berghuis&P. H. Kes, Two-dimensional collective pinning and vortex -lattice melting in a -Nb1−xGex films, Phys. Rev. B 47, 262, (1993)

    1993

  54. [69]

    E. F. Talantsev&J. L. Tallon, Universal self-field critical current for thin-film superconductors, Nat. Commun. 6, 7820, (2015)

    2015

  55. [70]

    Kokubo, T

    N. Kokubo, T. Yoshimura, &B. Shinozaki, Flow and Tilt -Induced Orientation of the Moving V ortex Lattice in Amorphous NbGe Superconducting Thin Films, J. Phys. Soc. Jpn. 82, (2013). −1 0 1 0 100 200 300 400 500 600 −20 −10 0 −1 0 1 0 100 200 300 400 500 600 0 10 20 I (mA)V (μA...

    2013

Pith tools

Reviewed August 10, 2026 · model on record in the stance chip above.