cond-mat.mes-hall

Geometric analogs of Bloch oscillations studied so far have relied on Berry curvature. We show that a weakly inhomogeneous electric field adds a distinct quantum-metric term to semiclassical wavepacket dynamics, generating an oscillatory real-space contribution even when the Berry curvature vanishes. The associated transport response comprises an intrinsic and a scattering-time-dependent part. In the regime studied, the latter can dominate and approach finite saturation at high field when the relative field inhomogeneity is held fixed. A tilted Dirac model illustrates the mechanism. Realistic platforms will likely require synthetically engineered superlattices, with a finite quantum metric and an adequate band gap.

While modern Large Language Models (LLMs) and agentic artificial intelligence (AI) have demonstrated transformative capabilities in digital domains, the realization of embodied AI capable of real-world scientific discovery remains a difficult frontier. The advancements are hindered by the inherent complexity of integrating high-level reasoning, multimodal information processing and real-time physical execution. Here we introduce Qumus, the first AI quantum materials experimentalist. Physically embodied within a robotic mini-laboratory, Qumus is an intelligent, multimodal, and multi-agent system designed for the creation and nano-processing of atomically thin two-dimensional (2D) materials and stacked van der Waals (vdW) structures. Qumus autonomously navigates the full scientific cycle, from hypothesis generation and protocol planning to multi-step experimental execution, result analysis and reporting, acting as an experimentalist. Markedly, the system has achieved, for the first time, the AI-creation of graphene, as well as the first AI-fabrication of complex nanodevices including atomically thin field-effect transistors via vdW stacking. Qumus excels at these tasks by demonstrating autonomous error correction and closed-loop experimentation. Our results establish a generalizable framework for self-improving embodied AI systems that learn directly from the quantum world, opening a pathway toward accelerated discovery in quantum materials, electronics and beyond.

Quantum spin Hall (QSH) insulators and Mott insulators are conventionally regarded as distinct insulating phases, arising from band topology and strong Coulomb interactions, respectively. Here, we report the observation of QSH edge transport in a magnetic-field-stabilized Mott insulating state at half filling of the second moire band in a 2.29 degree twisted WSe2 device. This state exhibits a resistance plateau identical to that of the single-particle QSH state at full filling of the first moire valence band, indicating the same number of helical edge channels. Electrical transport measurements reveal nearly quantized resistance that is insensitive to vertical electric field, out-of-plane magnetic field, and temperature below 5 K. Pronounced nonlocal transport and strong negative in-plane magnetoconductance further support helical edge conduction, establishing robust edge transport in the strongly correlated regime. Temperature-dependent Hall measurements reveal a characteristic temperature scale of approximately 10 K, corresponding to an energy scale of about 1 meV. Our results demonstrate that spin-conserved QSH edge states can persist in a half filled, strongly correlated insulating phase and under external magnetic field, opening a route toward interaction-resilient topological transport in moire quantum materials.

Quantum spin Hall (QSH) insulators and Mott insulators are conventionally regarded as distinct insulating phases, arising from band topology and strong Coulomb interactions, respectively. Here, we report the observation of QSH edge transport in a magnetic-field-stabilized Mott insulating state at half filling of the second moire band in a 2.29 degree twisted WSe2 device. This state exhibits a resistance plateau identical to that of the single-particle QSH state at full filling of the first moire valence band, indicating the same number of helical edge channels. Electrical transport measurements reveal nearly quantized resistance that is insensitive to vertical electric field, out-of-plane magnetic field, and temperature below 5 K. Pronounced nonlocal transport and strong negative in-plane magnetoconductance further support helical edge conduction, establishing robust edge transport in the strongly correlated regime. Temperature-dependent Hall measurements reveal a characteristic temperature scale of approximately 10 K, corresponding to an energy scale of about 1 meV. Our results demonstrate that spin-conserved QSH edge states can persist in a half filled, strongly correlated insulating phase and under external magnetic field, opening a route toward interaction-resilient topological transport in moire quantum materials.